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Everspin Technologies Inc
$Â 13,26
Na sluitingstijd:(3,34%)+0,44
$Â 13,70
Gesloten: 16 jan, 20:00:00 GMT-5 · USD · NASDAQ · Disclaimer
Vorige slotkoers
$Â 12,13
Dag-range
$Â 12,30 - $Â 13,47
Jaar-range
$Â 4,34 - $Â 13,47
Beurswaarde
303,01Â mln. USD
Gem. volume
305,11K
Koers/winst
-
Dividendrendement
-
Primaire beurs
NASDAQ
Marktnieuws
Financiële informatie
Resultatenrekening
Opbrengst
Netto inkomsten
| (USD) | sep 2025info | Wijziging j-o-j |
|---|---|---|
Opbrengst | 14,06Â mln. | 16,27% |
Bedrijfskosten | 8,75Â mln. | 8,48% |
Netto inkomsten | 54,00K | -97,62% |
Netto winstmarge | 0,38 | -97,98% |
Winst per aandeel | 0,06 | -65,25% |
EBITDA | -679,00K | 60,36% |
Effectief belastingtarief | -5,88% | — |
Balans
Totale activa
Totale passiva
| (USD) | sep 2025info | Wijziging j-o-j |
|---|---|---|
Contanten en kortetermijnbeleggingen | 45,26Â mln. | 14,32% |
Totale activa | 80,27Â mln. | 10,57% |
Totale passiva | 14,45Â mln. | 8,43% |
Totaal aandelenvermogen | 65,82 mln. | — |
Uitstaande aandelen | 22,86 mln. | — |
Koers-boekwaardeverhouding | 4,20 | — |
Rendement op activa | -4,85% | — |
Rendement op kapitaal | -5,62% | — |
Kasstroom
Nettomutatie in liquide middelen
| (USD) | sep 2025info | Wijziging j-o-j |
|---|---|---|
Netto inkomsten | 54,00K | -97,62% |
Operationele kasstroom | 881,00K | -68,96% |
Kasstroom uit beleggingen | -855,00K | -1.257,14% |
Kasstroom uit financiering | 269,00K | 448,98% |
Nettomutatie in liquide middelen | 295,00K | -89,55% |
Vrije kasstroom | -778,62K | -1,27% |
Over
Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory products, including Toggle MRAM and Spin-Transfer Torque MRAM product families. It also licenses its technology for use in embedded MRAM applications, magnetic sensor applications as well as performs backend foundry services for eMRAM.
MRAM has the performance characteristics close to static random-access memory while also having the persistence of non-volatile memory, meaning that it will not lose its charge or data if power is removed from the system. This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical. Wikipedia
Opgericht
2008
Hoofdvestiging
Website
Werknemers
87