具体实施方式 DETAILED DESCRIPTION

下面将参照附图对本发明的实施方式进行详细说明。 Referring to the drawings of the embodiments of the present invention will be described in detail.

(实施方式1)实施方式1是具有用与图像数据对应地被空间光调制元件调制了的光束将感光材料曝光的曝光头的曝光装置的实施方式。 (Embodiment 1) Embodiment 1 is an embodiment having a correspondence with the image data by the spatial light modulation element modulating the exposing light beam to the photosensitive material exposure head of the exposure apparatus.

[曝光装置的构成]本发明的实施方式的曝光装置如图1所示，具有将薄片状的感光材料150吸附保持在表面的平板状的载物台152。 Embodiment [Configuration of Exposure Apparatus] of the present invention, the exposure apparatus shown in Figure 1, has a sheet-like photosensitive material 150 is attracted and held on the surface of the plate-shaped stage 152. 在被4根脚部154支撑的较厚的板状的设置台156的上面，设有沿着载物台移动方向延伸的2条导引轨158。 Being four foot thick support plate 154 is provided above the table 156, along with a loading table movement direction extending two guide rails 158. 载物台152被按照其长度方向朝向载物台移动方向的方式配置，并且被导引轨158可以往复移动地支撑。 Stage 152 in accordance with its longitudinal direction being toward the load mode configuration stage moving direction, and the guide rail 158 can be moved reciprocally supported. 而且，在该曝光装置上，设有用于将载物台152沿着导引轨158驱动的未图示的驱动装置。 Moreover, in the exposure apparatus is provided for carrying the drive stage 152 along the guide rail 158 drive (not shown).

在设置台156的中央部，按照跨越载物台152的移动路径的方式设有コ字状的门160。 In the central portion of station set 156, in accordance with the movement path across the loading station 152 provided with a U-shaped manner in the door 160. コ字状的门160的各个端部被固定在设置台156的两个侧面上。 Respective ends of the U-shaped gate 160 is fixed on both sides of the table set 156. 夹隔该门160，在一方的一侧上设有扫描器162，在另一方的一侧上设有检测感光材料150的头端及后端的多个(例如2个)检测传感器164。 Every folder of the gate 160, on one side of the scanner 162 is provided with a plurality of head-end and back-end (for example, 2) detection sensor 164 detects the photosensitive material 150 on one side of the other. 扫描器162及检测传感器164被各自安装在门160上，被固定配置在载物台152的移动路径的上方。 The scanner 162 and detection sensors 164 are each mounted on the door 160 is fixedly disposed above the moving path of the stage 152. 而且，扫描器162及检测传感器164与控制它们的未图示的控制器连接。 Also, the scanner 162 and detection sensors 164 are connected to the control of the controller (not shown).

扫描器162如图2及图3(B)所示，具有被排列成m行n列(例如3行5列)的近似矩阵状的多个(例如14个)曝光头166。 The scanner 162 in FIG. 2 and FIG. 3 (B), the having been arranged in m rows and n columns (e.g. 3 rows 5) approximate matrix form a plurality of (e.g., 14) exposing head 166. 该例中，由于与感光材料150的宽度的关系，在第3行配置了4个曝光头166。 In this example, the relationship between the width of the photosensitive material 150, in the third line configuration of four exposure heads 166. 而且，表示配置在第m行的第n列的各个曝光头的情况表记为曝光头166mn。 Moreover, indicates that the configuration in the case of each exposure head m-th row n-th column of the table in mind the exposure head 166mn.

曝光头166的曝光区域168为将副扫描方向作为短边的矩形。 Exposure head exposed regions 166 168 to the sub-scanning direction as the short side of the rectangle. 所以，伴随着载物台152的移动，在感光材料150上就被每个曝光头166形成带状的曝光完成区域170。 So, along with moving the stage 152, the photosensitive material 150 is formed on each of the exposure head 166 exposed ribbon area 170 is completed. 而且，表示配置在第m行的第n列的各个曝光头的曝光区域时，表记为曝光区域168mn。 Further, when each represents the exposure head arranged in the m-th row in the exposure area n-th column of the table referred to as the exposure area 168mn.

另外，如图3(A)及(B)所示，按照使带状的曝光完成区域170在沿与副扫描方向正交的方向上没有空隙地排列的方式，被排列成线状的各行的曝光头各自被沿排列方向错开特定间隔(曝光区域的长边的自然数倍，本实施方式中为2倍)而配置。 Further, in FIG. 3 (A) and (B), the belt-like manner so that the exposure is completed there is no gap in the region 170 along the sub-scanning direction orthogonal to the arrayed direction, are arranged linearly in each row each exposure head is shifted along the arrangement direction at certain intervals (natural number times the long side of the exposure region, the present embodiment 2 times) and configuration. 所以，在第1行的曝光区域16811和曝光区域16812之间的无法曝光的部分，可以利用第2行的曝光区域16821和第3行的曝光区域16831来曝光。 So, can not be exposed partially exposed region of the first row between 16811 and 16812 of the exposure area, we can use the exposure area exposure area 16831 16821 2nd row and 3rd row to exposure.

曝光头16611～166mn分别如图4、图5(A)及(B)所示，作为将入射的光束与图像数据对应地对每个象素进行调制的空间光调制元件，具有数字·微镜·装置(DMD)50。 16611 ~ 166mn exposure head shown in Figure 4, respectively, FIG. 5 (A) and (B), as the incident light beam and the image data corresponding to the modulating spatial light modulation element for each pixel, a digital micromirror · · device (DMD) 50. 该DMD50与具有数据处理部和反射镜驱动控制部的未图示的控制器连接。 The DMD50 connected to the controller (not shown) having a data processing unit and a mirror drive control unit's. 该控制器的数据处理部中，基于被输入的图像数据，对每个曝光头166生成驱动控制DMD50的控制用的区域内的各微镜的控制信号。 The data processing unit of the controller, based on the inputted image data, each exposure head 166 generates the drive control signal for controlling the respective micromirrors within an area DMD50. 而且，对于控制用的区域将在后面叙述。 Moreover, for control of the area will be described later. 另外，反射镜驱动控制部中，基于在图像数据处理部中生成的控制信号，对每个曝光头166控制DMD50的各微镜的反射面的角度。 Further, the mirror drive control section, the control signal generated in the image data processing unit based on the angle of each micromirror of DMD50 reflecting surface for each exposure head 166 control. 而且，对于反射面的角度的控制将在后面叙述。 Further, the control angle of the reflecting surface will be described later.

在DMD50的光入射侧，将具有将光纤的出射端部(发光点)沿着与曝光区域168的长边方向对应的方向排列成一列的激光射出部的光纤阵列光源66、将从光纤阵列光源66射出的激光修正而使之向DMD上聚光的透镜系统67、将透过了透镜系统67的激光朝向DMD50反射的反射镜69沿着该顺序配置。 DMD50 light incident side of the fiber array light source having an exit end of the optical fiber (light emitting point) along the longitudinal direction of the exposure area 168 arranged in a row direction corresponding to the laser emitting unit 66, light from the optical fiber array 66 emitted laser correction in making it to the DMD condenser lens system 67, will pass through the lens system 67 toward DMD50 laser reflection mirror 69 is placed along the order.

透镜系统67由将从光纤阵列光源66射出的激光平行化的1对组合透镜71、按照使被平行化了的激光的光量分布达到均一的方式进行修正的1对组合透镜73及将被修正了光量分布的激光向DMD上聚光的聚光透镜75构成。 One pair of combination lenses 67 from the fiber array light source 66 by the laser beam emitted from the lens system parallel combination of one pair of lens 71, in accordance with the cause of the collimated laser beam to achieve a uniform distribution of light quantity is corrected to 73 and will be amended Laser light amount distribution of the DMD to a condenser lens 75. The condenser. 组合透镜73具有相对于激光出射端的排列方向与透镜的光轴接近的部分展宽光束并且远离光轴的部分缩窄光束，并且在沿与该排列方向正交的方向使光原样通过的功能，按照使光量分布达到均一的方式对激光进行修正。 A combination of lens 73 with respect to the arrangement direction of the laser exit end of the optical axis of the lens close to the partially widened portion of the light beam from the optical axis and narrowing the beam, and the function of light as it passed along the direction perpendicular to the direction of arrangement, in accordance with the light amount distribution to achieve a uniform way of laser correction. 或者，也可以使用flyeyelens或loadintegrator等光学系统将光量分布均一化。 Alternatively, you can use an optical system such flyeyelens or loadintegrator light quantity distribution uniform.

另外，在DMD50的光反射侧，配置有将被DMD50反射的激光在感光材料150的扫描面(被曝光面)56上成像的透镜系统54、58。 Further, the light reflection side DMD50, arranged to be DMD50 reflected laser scanning surface 150 of the photosensitive material (the exposed surface) of the lens 56 on the imaging system 54, 58. 透镜系统54及58被按照使DMD50和被曝光面56成为共轭的关系的方式配置。 Lens system 54 and 58 to be configured so that DMD50 and the exposure surface 56 become conjugate relationship approach.

DMD50如图6所示，是在SRAM单元(存储器单元)60上，用支柱支撑微小反射镜(微镜)62而配置的构件，是将构成象素(pixel)的多个(例如600个×800个)微小反射镜排列成光栅状而构成的反射镜装置。 DMD50 shown in Figure 6, in the SRAM cell (memory cell) 60, with a strut support micro mirrors (micromirrors) 62 configured member constituting a plurality of pixels (pixel) (e.g., 600 × 800) reflector means are arranged in a grating-like micro-mirrors constituted. 在各象素上，在最上部设有被支柱支撑的微反射镜62，在微反射镜62的表面蒸镀有铝等反射率高的材料。 In each pixel, at the uppermost part has micromirror 62 is supported by pillars, the micromirror 62 has a surface deposited high reflectance material such as aluminum. 而且，微反射镜62的反射率在90％以上。 Furthermore, the micro mirror 62 reflectivity of 90% or more. 另外，在微反射镜62的正下方，借助包括合页及叉架(yoke)的支柱配置有由通常的半导体存储器的生产线制造的硅栅极的CMOS的SRAM单元60，整体被单片地(一体化地)构成。 Furthermore, just below the micromirror 62, and hinge means comprising yoke (yoke) disposed pillars by a conventional semiconductor memory production line manufacturing silicon gate CMOS SRAM cell 60, is integrally monolithically ( integrally) form.

当向DMD50的SRAM单元60写入数字信号时，被支柱支撑的微反射镜62就会以对角线为中心相对于配置了DMD50的基板侧以±α度(例如±10度)的范围倾斜。 When writing the digital signal to the SRAM cells 60 DMD50, micromirror 62 is supported by a diagonal strut it will be centered with respect to the substrate side DMD50 configured to ± α ° (e.g., ± 10 degrees) in the range of inclination . 图7(A)表示倾斜为微反射镜62为开状态的+α度的状态，图7(B)表示倾斜为微反射镜62为关状态的-α度的状态。 Figure 7 (A) shows the micromirror 62 is tilted to the open state of the state of the + α, FIG. 7 (B) shows the micro mirror 62 is inclined to a state -α degrees off-state. 所以，通过与图像信号对应地，如图6所示控制DMD50的各象素的微反射镜62的倾斜度，就可以将向DMD50入射的光向各个微反射镜62的倾斜方向反射。 Therefore, in correspondence with the image signal, as shown in Figure 6 control the inclination of the micromirror of DMD50 62 of each pixel, can DMD50 incident light will be reflected toward the oblique direction of each micromirror 62.

而且，图6中，将DMD50的局部放大，表示微反射镜62被控制为+α度或-α度的状态的一个例子。 Moreover, FIG. 6, the local DMD50 enlarged, showing micro-mirror 62 is controlled to + α ° or -α state of one example. 各个微反射镜62的开关控制是利用与DMD50连接的未图示的控制器进行的。 Each micromirror switching control by the controller 62 is connected with a not shown DMD50 performed. 而且，在利用关状态的微反射镜62反射光束的方向上，配置有光吸收体(未图示)。 Further, in the direction of the reflected light beam 62 utilizing off-state micro mirror, light absorbing configuration (not shown).

另外，DMD50最好按照使其短边与副扫描方向成特定角度θ(例如1°～5°)的方式略为倾斜配置。 Further, DMD50 it according to the short side is preferably the sub-scanning direction specific angle θ (e.g. 1 ° ~ 5 °) slightly inclined configuration manner. 图8(A)表示未使DMD50倾斜时的各微反射镜的反射光像(曝光光束)53的扫描轨迹，图8(B)表示使DMD50倾斜时的各微反射镜的反射光像(曝光光束)53的扫描轨迹。 Figure 8 (A) indicates that no reflection of each micromirror of DMD50 inclined optical image (exposure beam) in the scanning track 53, FIG. 8 (B) shows the reflection of each micro mirror tilted DMD50 light image (exposure beam) 53 of the scanning trace.

在DMD50上，虽然将沿长边方向排列了多个微反射镜(例如800个)的微反射镜列沿短边方向排列多组(例如600组)，但是如图8(B)所示，通过使DMD50倾斜，各微反射镜的曝光光束53的扫描轨迹(扫描线)的间距P1小于未使DMD50倾斜时的扫描线的间距P2，从而可以大幅度地提高析像度。 On DMD50, although the arrangement of a plurality of micro-mirrors along the longitudinal direction (such as 800) micromirrors arranged in columns along the short side direction of a plurality of sets (such as 600 groups), but shown in Figure 8 (B), By tilting DMD50, scanning track 53 (scanning line) of the exposure light beam pitch P1 of each micromirror is not less than the pitch of DMD50 is inclined so that the scanning line P2, which can greatly improve the resolution. 另一方面，由于DMD50的倾斜角微小，因此使DMD50倾斜时的扫描宽度W2和未使DMD50倾斜时的扫描宽度W1近似相同。 On the other hand, due to the angle of inclination DMD50 small, thus the scan width W2 DMD50 inclined and not inclined to make scanning width W1 DMD50 approximately the same time.

另外，利用不同的微反射镜列可以在相同扫描线重合曝光(多次曝光)。 In addition, the use of different micromirror columns may coincide exposure (multiple exposure) in the same scanning line. 通过像这样进行多次曝光，就可以对曝光位置的微小量进行控制，从而可以实现高精细的曝光。 By performing multiple exposures, exposure to minute amounts of position can be controlled, thereby enabling highly precise exposure. 另外，利用微小量的曝光位置控制等数字图像处理，可以将沿主扫描方向排列的多个曝光头之间的连接点无阶梯地连接。 In addition, the use of small amounts of an exposure position control digital image processing can be a plurality of connection points along the exposure head arranged in the main scanning direction is connected between the non-stepped.

而且，即使不使DMD50倾斜，而将各微反射镜列沿与副扫描方向正交的方向错开特定间隔而配置为锯齿状，也可以获得相同的效果。 Moreover, without tilting so DMD50, and each micro mirror columns along the sub-scanning direction orthogonal to the direction shifted specific interval zigzag configuration, the same effect can be obtained.

光纤阵列光源66如图9(A)所示，具有多个(例如6个)激光器模块64，在各激光器模块64上，结合有多模式光纤30的一端。 Fiber array light source 66 in FIG. 9 (A), includes a plurality (e.g., six) laser modules 64, 64 in each of the laser modules, combined with an end 30 of the multiple-mode optical fiber. 在多模式光纤30的另一端上，结合有芯径与多模式光纤30相同并且包层直径小于多模式光纤30的光纤31，如图9(C)所示，光纤31的出射端部(发光点)沿着与副扫描方向正交的主扫描方向被排列成1列而构成激光射出部68。 On the other end of the multimode optical fiber 30, incorporating a multi-mode optical fiber core diameter 30 is smaller than the diameter of the same package and multi-mode optical fiber 30 of the optical fiber 31, as shown in Figure 9 (C), the optical fiber end portion 31 of the exit layer (light emitting points) are arranged along the main scanning direction and the sub-scanning direction perpendicular to constitute a laser emitting section 68. 而且，如图9(D)所示，可以将发光点沿着主扫描方向排列成2列。 Moreover, as shown in 9 (D), the light emitting point can be arranged along the main scanning direction 2.

光纤31的出射端部如图9(B)所示，被表面平坦的2片支撑板65夹入而固定。 Outgoing end of the optical fiber 31 in FIG. 9 (B), the flat surface 2 by the support plate 65 is sandwiched and fixed. 另外，在光纤31的光射出侧，为了保护光纤31的端面，配置有玻璃等透明的保护板63。 Further, the light emission side optical fiber 31, in order to protect the end face of the optical fiber 31, is disposed a transparent protective glass plate 63. 保护板63既可以与光纤31的端面密接配置，也可以按照将光纤31的端面密封的方式配置。 Both the protective plate 63 in close contact with the end face of the optical fiber 31 is configured to be in accordance with the sealed end face of the optical fiber 31 is arranged. 光纤31的出射端部虽然光密度高，容易集尘而劣化，但是通过配置保护板63就可以防止灰尘向端面上的附着，并且可以延迟劣化。 The exit end of the optical fiber 31 although the light density, dust easily deteriorated, but by configuring the protective plate 63 can prevent dust from adhering to the end face, and may delay the deterioration.

该例中，为了将包层直径小的光纤31的出射端无间隙地排列成1列，在以包层大的部分相毗连的2条多模式光纤30之间将多模式光纤30层叠，与被层叠了的多模式光纤30结合的光纤31的出射端被按照夹隔在与用包层直径大的部分相毗连的2条多模式光纤30结合的光纤31的2个出射端之间的方式排列。 In this example, for the small diameter of the cladding exit end of the optical fiber 31 are arranged without a gap between the large cladding portion adjoining the more than two multi-mode fiber 30 mode laminated fiber 30, and was laminated multi-mode optical fiber 30 bonded exit end of the optical fiber 31 is according sandwiched separated in two out of the way exit end between the clad large diameter portion adjoining the more than two-mode optical fiber 30 bonded fiber 31 arrangement.

此种光纤例如如图10所示，可以通过在包层直径大的多模式光纤30的激光射出侧的头端部分上，同轴地结合长度1～30cm的包层直径小的光纤31而获得。 Such an optical fiber 10 for example, can be produced by the laser emitting side end portion of clad head larger diameter multimode optical fiber 30, coaxially bonded cladding layer 1 ~ 30cm length of a small diameter optical fiber 31 is obtained . 2条光纤通过将光纤31的入射端面按照使两光纤的中心轴一致的方式焊接在多模式光纤30的出射端面上而结合。 Two optical fibers by the incident end face of the optical fiber 31 so that the two optical fibers in a consistent manner the central axis welded to the exit end face of the multi-mode fiber 30 are bonded. 如上所述，光纤31的芯31a的直径可以是与多模式光纤30的芯30a的直径相同的大小。 As described above, the core 31a of the fiber 31 diameter may be multi-mode optical fiber core 30a 30 of the same diameter size.

另外，也可以将在长度短而包层直径大的光纤上焊接了包层直径小的光纤的短尺寸光纤，借助金属环或光连接器等与多模式光纤30的出射端结合。 In addition, it can also welded to the short length and large diameter cladding fiber cladding diameter of the small size of the fiber short fiber, with a metal ring or optical connectors and multi-mode optical fiber exit end 30 combination. 通过使用连接器等可以装卸地结合，在包层直径小的光纤破损等情况下就可以很容易地更换头端部分，从而可以减少曝光头的维护中所需要的成本。 Can be detachably combined by using connectors in the fiber cladding diameter small breakage, etc. can be easily replaced head end portion, which can reduce the cost of the exposure head maintenance required. 而且，以下，有时将光纤31称为多模式光纤30的出射端部。 Moreover, hereinafter, sometimes referred to as the exit end 31 the fiber portion of the multi-mode optical fiber 30.

作为多模式光纤30及光纤31，可以是阶梯折射率型光纤、折射率渐变型光纤及复合型光纤的任意一种。 As a multi-mode optical fiber 30 and optical fiber 31, it can be a step index fibers, either graded refractive index optical fiber and composite fibers. 例如，可以使用三菱电线工业株式会社制的阶梯折射率型光纤。 For example, Mitsubishi Cable Industries Ltd. stepped index fibers. 本实施方式中，多模式光纤30及光纤31为阶梯折射率型光纤，多模式光纤30包层直径＝125μm，芯径＝25μm，NA＝0.2，入射端面涂层的透过率＝99.5％以上，光纤31的包层直径＝60μm，芯径＝25μm，NA＝0.2。 In this embodiment, the multi-mode optical fiber 30 and the optical fiber 31 is stepped index type optical fibers, multimode optical fiber 30 clad diameter = 125μm, core diameter = 25μm, NA = 0.2, the transmittance of the above incident end surface coating = 99.5% , cladding diameter of the optical fiber 31 = 60μm, core diameter = 25μm, NA = 0.2.

一般来说，红外区域的激光中，当减小光纤的包层直径时，传输损失就会增加。 In general, the laser infrared region, when the fiber cladding diameter is reduced, the transmission loss will increase. 所以，要与激光的波长频域对应地决定合适的包层直径。 So, to the wavelength of the laser to correspond to the frequency domain to determine the appropriate cladding diameter. 但是，波长越短则传输损失就越少，从GaN类半导体激光器中射出的波长405nm的激光中，即使将包层的厚度{(包层直径一芯径)/2}设为传输800nm的波长频域的红外光时的1/2左右，传输通信用的1.5μm的波长频域的红外光时的大约1/4左右，传输损失基本上也不会增加。 However, the shorter the wavelength of the transmission loss less, emitted from the GaN-based semiconductor laser of 405nm wavelength of the laser, even if the thickness of the cladding layer is {(clad diameter of a core diameter) / 2} is set to the transmission wavelength of 800nm left and right frequency domain infrared light is 1/2, about 1/4 of the communication wavelength infrared transmission 1.5μm frequency domain when the light transmission loss does not increase substantially. 所以，就可以将包层直径缩小至60μm。 So, you can narrow the cladding diameter to 60μm. 通过使用GaN类的LD，就可以容易地获得高光密度的光束。 By using the GaN-based LD, it is possible to easily obtain a high optical density of the light beam.

但是，光纤31的包层直径并不限定于60μm。 However, the clad diameter of the optical fiber 31 is not limited to 60μm. 以往的光纤光源中使用的光纤的包层直径虽然为125μm，但是由于包层直径越小则焦点深度就越深，因此多模式光纤的包层直径优选80μm以下，更优选60μm以下，进一步优选40μm以下。 Although the cladding diameter of the optical fiber in a conventional fiber optic light source used is 125μm, but because the smaller the diameter of the cladding deeper depth of focus, and therefore the diameter of the cladding of the multimode fiber is preferably 80μm or less, more preferably 60μm or less, more preferably 40μm the following. 另一方面，由于芯径至少需要为3～4μm，因此光纤31的包层直径优选10μm以上。 On the other hand, since the core diameter of at least 3 ~ 4μm, thus clad diameter of the optical fiber 31 is preferably 10μm or more.

激光器模块64由图11所示的合波激光光源(光纤光源)构成。 Laser module 64 co-wave laser light source (fiber light source) shown in Figure 11 constitutes. 该合波激光光源由被排列固定在加热块(heat block)10上的多个(例如7个)芯片状的横多模式或单模式的GaN类半导体激光器LD1、LD2、LD3、LD4、LD5、LD6及LD7、与GaN类半导体激光器LD1～LD7分别对应设置的校准透镜11、12、13、14、15、16及17、1个聚光透镜20、1条多模式光纤30构成。 The co-wave laser light source is arranged by a fixed multiple (eg 7) 10 on the heating block (heat block) chip-shaped transverse multi-mode or single-mode GaN-based semiconductor lasers LD1, LD2, LD3, LD4, LD5, LD6 and LD7, and GaN-based semiconductor lasers LD1 ~ LD7 corresponding set of calibration lens 11,12,13,14,15,16 and a condenser lens 20,1 17,1 Article 30 constitute a multi-mode optical fiber. 而且，半导体激光器的个数并不限定于7个。 Moreover, the number of semiconductor lasers is not limited to seven. 例如，在包层直径＝60μm，芯径＝50μm，NA＝0.2的多模式光纤中，可以入射20个半导体激光，从而可以实现曝光头的必需光量，并且将光纤条数进一步减少。 For example, the clad diameter = 60μm, core diameter = 50μm, NA = 0.2 multi-mode fiber, can be incident on the semiconductor laser 20, which can achieve the necessary amount of light exposure head, and will further reduce the number of optical fibers.

GaN类半导体激光器LD1～LD7激发波长全都相同(例如为405nm)，最大输出也全都相同(例如在多模式激光器中为100mW，在单模式激光器中为30mW)。 GaN-based semiconductor lasers LD1 ~ LD7 excitation wavelength all the same (for example, 405nm), the maximum output is also all the same (for example in a multi-mode laser is 100mW, single-mode laser is 30mW). 而且，作为GaN类半导体激光器LD1～LD7，也可以在350nm～450nm的波长范围内，使用具有所述的405nm以外的激发波长的激光器。 Furthermore, as the GaN-based semiconductor lasers LD1 ~ LD7, may be in a wavelength range of 350nm ~ 450nm, 405nm using a laser having an excitation wavelength of said outside.

所述的合波激光光源如图12及图13所示，与其他的光学要素一起，被收纳在上方开口的箱状的包装盒40内。 The multiplexed laser light sources 12 and 13, together with other optical elements, is accommodated in the upper opening of the box-shaped box 40. 包装盒40具有被按照可以关闭其开口的方式制成的包装盒盖41，通过在脱气处理后导入密封气体，将包装盒40的开口用包装盒盖41关闭，就将所述合波激光光源气密性地密封在由包装盒40和包装盒盖41所形成的封闭空间(密封空间)内。 Box 40 has been closed in accordance with the way it can be made of the opening of the packaging lid 41, by introducing the seal gas after degassing, the opening lid with packing boxes 40 41 closed, it will be the co-wave laser light source hermetically sealed in the closed space defined by the box 40 and lid 41 is formed packaging (sealing space).

在包装盒40的底面上固定有基座板42，在该基座板42的上面，安装有所述加热块10、保持聚光透镜20的聚光透镜夹具45、保持多模式光纤30的入射端部的光纤夹具46。 In the bottom surface of the box 40 is fixed to the base plate 42, on top of the base plate 42, the heating block 10 is mounted, the condenser lens 20 condenser lens holding jig 45, to maintain the multi-mode optical fiber 30 is incident optical fiber end portion 46 of the jig. 多模式光纤30的出射端部被从形成于包装盒40的壁面上的开口向包装盒外引出。 Exit ends of multimode optical fiber 30 is drawn from the outer wall surface of the box is formed on the opening 40 of the box.

另外，在加热块10的侧面上安装有校准透镜夹具44，保持有校准透镜11～17。 Further, on the side of the heating block 10 is attached to the lens holder 44 alignment, collimating lens 11 is held to 17. 在包装盒40的横壁面上形成开口，穿过该开口将向GaN类半导体激光器LD1～LD7供给驱动电流的配线47向包装盒外引出。 On the box transverse wall 40 has an opening through which the opening will be GaN-based semiconductor lasers LD1 ~ LD7 drive current supply line 47 leads to the outside of the box.

而且，在图13中，为了避免图的复杂化，仅对多个GaN类半导体激光器中的GaN类半导体激光器LD7赋予编号，并仅对多个校准透镜中的校准透镜17赋予编号。 Further, in FIG. 13, in order to avoid complicating the diagram, only a plurality of GaN-based semiconductor lasers GaN-based semiconductor laser LD7 given number, and only a plurality of collimating lens 17 of collimating lens assigned number.

图14是表示所述校准透镜11～17的安装部分的正面形状的图。 14 is a front shape of the collimating lens mounting portion of Fig. 11 to 17. 校准透镜11～17分别被制成用平行的平面将包括具有非球面的圆形透镜的光轴的区域切割为细长条的形状。 Collimating lens 11 to 17 were made parallel to the plane including the region having an optical axis aspherical lens cutting circular shape of an elongated strip. 该细长形状的校准透镜例如可以通过将树脂或光学玻璃塑造成型来制成。 The elongated shape of the collimator lens, for example can be produced by molding resin or optical glass shape to be made. 校准透镜11～17被按照长度方向与GaN类半导体激光器LD1～LD7的发光点的排列方向(图14的左右方向)正交的方式，密接配置于所述发光点的排列方向上。 Collimating lens 11 to 17 are arranged in the direction of the longitudinal direction in accordance with the GaN-based light emitting point of the semiconductor laser LD1 ~ LD7 (the left-right direction in FIG. 14) orthogonal manner, is disposed in close contact with the array direction of the light emitting point.

另一方面，作为GaN类半导体激光器LD1～LD7，使用具有发光宽度为2μm的活性层，在与活性层平行的方向、成直角的方向的束散角分别例如为10°、30°的状态下产生各个激光束B1～B7的激光器。 For example, 10 °, 30 ° in a state where the beam divergence angle on the other hand, as the GaN-based semiconductor lasers LD1 ~ LD7, having a width of 2μm emitting active layer, the active layer in the direction parallel to the direction at right angles to, respectively generating respective laser beams B1 ~ B7 laser. 这些GaN类半导体激光器LD1～LD7被按照使发光点沿与活性层平行的方向排成1列的方式配设。 These GaN-based semiconductor lasers LD1 ~ LD7 are arranged in accordance with a light-emitting point along a direction parallel to the active layer disposed way.

所以，从各发光点发出的激光束B1～B7就会如上所述，在相对于细长形状的各校准透镜11～17，束散角大的方向与长度方向一致，束散角小的方向与宽度方向(与长度方向正交的方向)一致的状态下入射。 Therefore, the laser beam emitted from the light-emitting point B1 ~ B7 will be as described above, with respect to the elongated shape of each collimating lens 11 to 17, the spread angle of the longitudinal direction in the same direction, the small beam divergence angle of direction consistent with the width direction (direction orthogonal to the longitudinal direction) is incident under a state. 即，各校准透镜11～17的宽度为1.1mm，长度为4.6mm，向它们入射的激光束B1～B7的水平方向、垂直方向的束径分别为0.9mm、2.6mm。 That is, the width of each collimating lens 17 is 11 ~ 1.1mm, a length of 4.6mm, which is incident to the beam diameter of the laser beam B1 ~ B7 in the horizontal direction, the vertical direction are 0.9mm, 2.6mm. 另外，校准透镜11～17各自的焦点距离f1＝3mm，NA＝0.6，透镜配置间距＝1.25mm。 In addition, each of collimating lens 11 to a focal length of 17 f1 = 3mm, NA = 0.6, a lens arrangement pitch = 1.25mm.

聚光透镜20被平行的平面将包括具有非球面的圆形透镜的光轴的区域切割为细长条，形成在校准透镜11～17的排列方向即水平方向较长，在与之成直角的方向上较短的形状。 Is parallel to the plane including the optical axis of the condenser lens 20 of a circular area having an aspherical lens cut into an elongate strip, is formed in the arrangement direction collimating lenses 11 to 17 is longer in the horizontal direction, i.e., at right angles thereto direction of the shorter form. 该聚光透镜20的焦点距离f2＝23mm，NA＝0.2。 The focal distance of the condenser lens 20 f2 = 23mm, NA = 0.2. 该聚光透镜20例如也通过将树脂或光学玻璃塑造成型而制成。 The condenser lens 20 for example, by molding resin or optical glass shape made.

[曝光装置的动作]下面对所述曝光装置的动作进行说明。 [Action exposure apparatus] Next, the operation of the exposure apparatus will be described.

在扫描器162的各曝光头166中，从构成光纤阵列光源66的合波激光光源的GaN类半导体激光器LD1～LD7中分别以发散光的状态下射出的激光束B1、B2、B3、B4、B5、B6及B7分别被对应的校准透镜11～17平行光化。 In each of the exposure heads 166 in the scanner 162, from the GaN-based semiconductor lasers constituting the multiplexed laser light source 66, an optical fiber array light source LD1 ~ LD7 to the next state diverging laser beams emitted respectively B1, B2, B3, B4, B5, B6 and B7 respectively correspond to the collimator lens 11 to parallel actinic 17. 被平行光化了的激光束B1～B7被聚光透镜20聚光，向多模式光纤30的芯30a的入射端面会聚。 The collimated laser beam of actinic B1 ~ B7 condensed by the condenser lens 20, is incident to the end face 30a of the multimode optical fiber 30 converges.

本例中，利用校准透镜11～17及聚光透镜20构成聚光光学系统，利用该聚光光学系统和多模式光纤30构成合波光学系统。 In this example, the use of collimating lens 17 and condenser lens 11 to constitute a converging optical system 20, and the converging optical system using the multi-mode optical fiber 30 constitute an optical combiner system. 即，被聚光透镜20如上所述聚光的激光束B1～B7向该多模式光纤30的芯30a入射而在光纤内传输，被合波为1条激光束B而从与多模式光纤30的出射端部结合的光纤31射出。 That is the core 30a enters the condenser lens 20 as described above condenser of the laser beam B1 ~ B7 to the multi-mode optical fiber 30 in the optical fiber transmission is multiplexed to a laser beam B from the multi-mode optical fiber 30 The outgoing end of the optical fiber 31 is emitted binding.

在各激光器模块中，在激光束B1～B7的向多模式光纤30的结合效率为0.85，GaN类半导体激光器LD1～LD7的各输出为30mW的情况下，对于各个被排列为阵列状的光纤31，可以获得输出180mW(＝30mW×0.85×7)的合波激光束B。 In each laser module, the laser beams B1 ~ B7 to the multimode optical fiber 30 is combined with the efficiency of 0.85, GaN-based semiconductor lasers LD1 ~ LD7 each output is 30mW case, for each array are arranged in the form of an optical fiber 31 can be obtained output 180mW (= 30mW × 0.85 × 7) of the multiplexed laser beam B. 所以，将6条光纤31排列成阵列状的激光射出部68处的输出大约为1W(＝180mW×6)。 Therefore, the output of six optical fibers 31 are arranged in an array of laser emitting unit 68 is about 1W (= 180mW × 6).

在光纤阵列光源66的激光射出部68上，如上所述高亮度的发光点被沿着主扫描方向排列成一列。 In the fiber array light source 66 emits a laser unit 68, as described above high-brightness light-emitting points are arranged in a main scanning direction. 由于使来自单一的半导体激光器的激光与1条光纤结合的以往的光纤光源为低输出，因此必须排列成多列才能获得所需的输出，但是，本实施方式中使用的合波激光光源由于为高输出，因此用少数列例如1列就可以获得所需的输出。 Because the laser beam from a single semiconductor laser with a combination of a conventional optical fiber for the fiber source of low output, and therefore must be arranged in a plurality of rows in order to obtain the desired output, however, the multiplexed laser light source used in the present embodiment, since the High output, such as a column with a few you can get the desired output.

例如，在使半导体激光器和光纤1对1地结合的以往的光纤光源中，由于通常作为半导体激光器使用输出30mW(毫瓦)的激光器，作为光纤使用芯径50μm，包层直径125μm，NA(数值孔径)为0.2的多模式光纤，因此如果要获得大约1W(瓦特)的输出，就必须捆扎48条(8×6)多模式光纤，由于发光区域的面积为0.62mm2(0.675mm×0.925mm)，因此激光射出部68处的亮度为1.6×106(W/m2)，每1条光纤的亮度为3.2×106(W/m2)。 For example, when the semiconductor laser and the optical fibers 1-on-1 binds to a conventional fiber source, since the semiconductor laser is generally used as output 30mW (milliwatt) laser, used as an optical fiber core diameter 50μm, a cladding diameter of 125μm, NA (numerical aperture) of 0.2 multi-mode optical fiber, so if you want to get about 1W (watt) output, it is necessary to tying 48 (8 × 6) multi-mode fiber, since the area of ​​the light-emitting region is 0.62mm2 (0.675mm × 0.925mm) and therefore brightness laser emitting portion 68 is 1.6 × 106 (W / m2), luminance per one optical fiber is 3.2 × 106 (W / m2).

与之相反，本实施方式中，如上所述，可以用6条多模式光纤6获得大约1W的输出，由于激光射出部68处的发光区域的面积为0.0081mm2(0.325mm×0.025mm)，因此激光射出部68处的亮度就为123×106(W/m2)，与以往相比可以实现大约80倍的高亮度化。 In contrast, in this embodiment, as described above, it can be used more than six mode optical fiber 6 was about 1W output, since the area of ​​the light-emitting region of laser emission portion 68 is 0.0081mm2 (0.325mm × 0.025mm), and therefore brightness laser emitting unit 68 on a 123 × 106 (W / m2), and can be achieved compared to conventional about 80 times higher brightness. 另外，每1条光纤的亮度为90×106(W/m2)，与以往相比可以实现大约28倍的高亮度化。 In addition, the brightness of each optical fiber is a 90 × 106 (W / m2), can be achieved as compared with the conventional about 28 times higher luminance.

这里，参照图15(A)及(B)，对以往的曝光头和本实施方式的曝光头的焦点深度的不同进行说明。 Here, referring to FIG. 15 (A) and (B), the focus in the past exposure head and the exposure head of the present embodiment will be described in different depths. 以往的曝光头的束状光纤光源的发光区域的副扫描方向的直径为0.675mm，本实施方式的曝光头的光纤阵列光源的发光区域的副扫描方向的直径为0.025mm。 Diameter sub-scanning direction of the light emitting region of a conventional exposure head bundled fiber source is 0.675mm, the diameter of the sub-scanning direction of the light-emitting region according to this embodiment of the fiber array light exposure head is 0.025mm. 如图15(A)所示，以往的曝光头中，由于光源(束状光纤光源)1的发光区域较大，因此向DMD3入射的光束的角度变大，结果向扫描面5入射的光束的角度就变大。 FIG. 15 (A), the conventional exposing head, since a large light emitting area (bundled fiber source) 1, and therefore the beam incident angle DMD3 becomes large, the result of the scanning plane an incident light beam 5 angle becomes larger. 所以，相对于聚光方向(合页方向的偏移)束径容易变粗。 Therefore, with respect to the converging direction (the direction of the offset hinge) easily thicken the beam diameter.

另一方面，如图15(B)所示，本实施方式的曝光头中，由于光纤阵列光源66的发光区域的副扫描方向的直径较小，因此通过透镜系统67而向DMD50入射的光束的角度变小，结果向扫描面56入射的光束的角度就变小。 On the other hand, FIG. 15 (B), the exposure head of the present embodiment, since the sub-scanning direction of the smaller diameter fiber array light source region 66, and therefore to DMD50 through lens system 67 incident beam angle becomes smaller, the scan results to the angle of the light beam incident surface 56 becomes smaller. 即，焦点深度变深。 That is, the depth of focus becomes deeper. 该例中，发光区域的副扫描方向的直径变为以往的大约30倍，可以获得大约相当于衍射边界的焦点深度。 In this example, the diameter of the sub-scanning direction of the light emitting region becomes about 30 times in the past can be obtained approximately equivalent depth of focus of the diffraction limit. 所以适于微小点的曝光。 So suitable for small points of light. 对该焦点深度的效果，曝光头的必需光量越大则越明显、有效。 The effect of the depth of focus, the amount of light exposure necessary to head the greater the more obvious and effective. 该例中，向曝光面投影的1个象素尺寸为10μm×10μm。 In this example, the exposed surface of the projection of a pixel size of 10μm × 10μm. 而且，DM虽然为反射型的空间调制元件，但是图15(A)及(B)为了说明光学的关系采用了展开图。 Moreover, DM although the reflection type spatial modulation element, but FIG. 15 (A) and (B) in order to show the relationship between the optical employs expanded view.

与曝光图案对应的图像数据被输入与DMD50连接的未图示的控制器中，被暂时储存在控制器内的帧存储器中。 Exposure pattern corresponding to the image data input by the controller (not shown) connected to DMD50, and is temporarily stored in the frame memory controller. 该图像数据是将构成图像的各象素的浓度用2值(点的记录的有无)来表示的数据。 (Point of presence or absence of record) data of the image data is represented by the concentration of each pixel constituting an image with binary.

将感光材料150吸附在表面的载物台152，被未图示的驱动装置沿着导引轨158从门160的上游侧向下游侧以一定速度移动。 The photosensitive material 150 at the adsorption surface of the stage 152, the driving means is not shown along the guide rail 158 from the upstream side to the downstream side of the gate 160 at a constant speed. 在载物台152通过门160下时，当利用安装在门160上的检测传感器164检测出感光材料150的头端时，就会将储存在帧存储器中的图像数据每次多行地依次读出，基于被数据处理部读出的图像数据，对每个曝光头166生成控制信号。 When the next stage 152 through gate 160, when using the detection sensor 164 mounted on the door 160 is detected by the head end of the photosensitive material 150, the image data will be stored in the frame memory of each line sequentially read more out, the data is read out based on the image data processing section for each exposure head 166 generates a control signal. 此外，利用反射镜驱动控制部，基于所生成的控制信号，对每个曝光头166，对DMD50的微镜分别进行开关控制。 In addition, the use of a mirror drive control section, based on the control signal generated for each exposing head 166, respectively, of DMD50 micromirror switching control.

当从光纤阵列光源66向DMD50照射激光时，在DMD50的微镜为开状态时被反射的激光就会被透镜系统54、58在感光材料150的被曝光面56上成像。 When the fiber array light source 66 to DMD50 irradiated with laser light, the laser microscope in DMD50 the open state will be reflected by a lens system 54, 58 in the photosensitive material 56 is exposed on the surface 150 of imaging. 这样，从光纤阵列光源66射出的激光对每个象素被开关，感光材料150被与DMD50的使用象素数大约相同数目的象素单位(曝光区域168)曝光。 Thus, the light source 66 is emitted from the fiber array laser is switched for each pixel, the photosensitive material 150 is used with about the same number of pixels DMD50 number of pixel units (exposure area 168) exposed. 另外，通过将感光材料150与载物台152一起以一定速度移动，感光材料150就会被扫描器162沿与载物台移动方向相反的方向进行副扫描，被每个曝光头166形成带状的曝光完成区域170。 Further, the photosensitive material 150 by the stage 152 to move along at a constant speed, the photosensitive material 150 by the scanner 162 will be in the opposite direction with the moving direction of the loading station sub-scanning, each exposure head 166 formed by the strip The exposure is complete region 170.

如图16(A)及(B)所示，本实施方式中，在DMD50上，沿主扫描方向排列了800个微镜的微镜列虽然沿副扫描方向被排列为600组，但是本实施方式中，按照利用控制器仅驱动一部分的微镜列(例如800个×100列)的方式来控制。 In FIG. 16 (A) and (B) shown in this embodiment, the DMD50, along the main scanning direction 800 micromirrors arrayed micromirror columns although the sub-scanning direction are arranged 600 group, but the present embodiment manner in accordance with the controller is only part of the drive micromirror columns (such as 800 × 100 columns) way to control.

既可以如图16(A)所示，使用配置于DMD50的中央部的微镜列，也可以如图16(B)所示，使用配置于DMD50的端部的微镜列。 Either FIG. 16 (A), the central portion of the column using a micromirror disposed in DMD50 to be as shown in Figure 16 (B), the use of DMD50 micromirror disposed in the end portion of the column. 另外，当在一部分的微镜上产生了缺陷时，也可以使用未产生缺陷的微镜列等，根据状况对所使用的微镜列进行适当变更。 In addition, when produced on a portion of the mirror defect, a defect can also be used without the mirror columns, etc., depending on the situation on the mirror columns used appropriately changed.

由于在DMD50的数据处理速度上有限制，与所使用的象素数成比例地决定每1行的调制速度，因此通过仅使用一部分的微镜列，每1行的调制速度就会加快。 Because of limitations on DMD50 data processing speed, the number of pixels used in proportion with the determined modulation rate per one line, and therefore using only a portion of the column of micromirrors, the modulation rate per one line will accelerate. 另一方面，在连续地使曝光头相对于曝光面进行相对移动的曝光方式的情况下，不需要全部使用副扫描方向的象素。 On the other hand, in continuously exposing the exposed surface of the head with respect to the relative movement of the exposure mode, it is unnecessary to use all of the pixels in the sub-scanning direction.

例如，在600组的微镜列之中仅使用300组的情况下，如果与将600组全部使用的情况相比较，则可以每1行加快2倍地进行调制。 For example, when using a 300 group 600 group among micromirror columns only, if compared with the case will all use the 600 group, it can speed up to 2 times per line modulation. 另外，在600组的微镜列之中仅使用200组的情况下，如果与将600组全部使用的情况相比较，则可以每1行加快3倍地进行调制。 Under In addition, among the 600 groups micromirror columns using only 200 groups, if compared with the case will all use the 600 group, it can speed up to three times each line modulation. 即，可以沿副扫描方向将500mm的区域在17秒内曝光。 I.e., along the sub-scanning direction of the exposure area 500mm in 17 seconds. 另外，在仅使用100组的情况下，则可以每1行加快6倍地进行调制。 Further, in the case of using only 100 groups, it is possible to speed up six times per line to be modulated. 即，可以沿副扫描方向将500mm的区域在9秒内曝光。 I.e., along the sub-scanning direction of the exposure area 500mm within 9 seconds.

所使用的微镜列的个数，即沿副扫描方向排列的微镜的个数优选10个以上并且为200个以下，更优选10个以上并且为100个以下。 The number of the number of columns of micromirrors used, i.e. aligned along the sub-scanning direction of the micromirror is preferably 10 or more and 200 or less, more preferably 10 or more and is 100 or less. 由于每1个相当于1个象素的微镜的面积为15μm×15μm，因此当换算为DMD50的使用区域时，优选12mm×150μm以上并且为12mm×3mm以下的区域，更优选12mm×150μm以上并且为12mm×1.5mm以下的区域。 Since each micromirror corresponds to one pixel of an area of ​​15μm × 15μm, so when converted into the area of ​​use DMD50, preferably 12mm × 150μm 12mm × 3mm or more and the area below, and more preferably more than 12mm × 150μm and the region is 12mm × 1.5mm or less.

如果所使用的微镜列的个数在所述范围内，则如图17(A)及(B)所示，可以将从光纤阵列光源66射出的激光用透镜系统67近似平行光化，向DMD50照射。 If the number of columns of micromirrors used within the range, as shown in 17 (A) and (B), can be emitted from the fiber array laser source 66 by the lens system 67 approximately parallel to actinic to DMD50 exposure. 利用DMD50照射激光的照射区域最好与DMD50的使用区域一致。 Use DMD50 irradiating laser irradiation area is preferably the same as the area of ​​use DMD50. 当照射区域比使用区域更宽时，则激光的利用效率降低。 When the region is wider than the irradiation area, the utilization efficiency of the laser is reduced.

另一方面，虽然有必要将向DMD50上聚光的光束的副扫描方向的直径根据利用透镜系统67沿副扫描方向排列的微镜的个数缩小，但是当所使用的微镜列的个数少于10个时，则由于向DMD50入射的光束的角度变大，扫描面56的光束的焦点深度变浅，因此不十分理想。 On the other hand, although the number of mirror sub-scanning direction will be necessary DMD50 converging beam diameter based on the use of the lens system 67 are arranged in the sub-scanning direction is reduced, but a small number when used micromirrors column at 10, then since the incident angle of the light beam to DMD50 becomes large, shallow depth of focus beam scanning surface 56, and therefore not very satisfactory. 另外，从调制速度的观点出发，所使用的微镜列的个数优选200以下。 Further, from the viewpoint of modulation speed, the number of columns used in the preferred micromirror 200 or less. 而且，DMD虽然是反射型的空间调制元件，但是图17(A)及(B)为了说明光学的关系，采用了展开图。 Furthermore, DMD although reflective type spatial modulator device, but FIG. 17 (A) and (B) in order to show the relationship between the optical and expanded using FIG.

当利用扫描器162进行的感光材料150的副扫描结束，用检测传感器164检测出感光材料150的后端时，载物台152就被未图示的驱动装置沿着导引轨158而复原至位于门160的最上游侧的原点，再次被沿着导引轨158从门160的上游侧向下游侧以一定速度移动。 When the photosensitive material using the scanner 162 of the end 150 of the sub-scan by the detection sensor 164 detects the rear end of the photosensitive material 150, the stage driving means 152 is not shown along the guide rail 158 and restored to located at the origin of the most upstream side of the door 160, again along the side to the downstream side from the upstream guide rail 158 of the door 160 move at a constant speed.

如上说明所示，本实施方式的曝光装置具有将沿主扫描方向排列了800个微镜的微镜列沿副扫描方向排列了600组的DMD，但是，由于按照利用控制器仅驱动一部分的微镜列的方式进行控制，因此与驱动全部的微镜列的情况相比，每1行的调制速度变快。 As described above, the present embodiment is an exposure device has been ranked 800 micromirrors arrayed micromirrors DMD 600 Group column in the sub-scanning direction along the main scanning direction, however, as only a part of the drive in accordance with the use of micro-controller way mirror control column, as compared with the case of driving all of the micromirrors columns per row modulation speed becomes faster. 这样就可以实现高速的曝光。 This enables high-speed exposure.

另外，由于在照明DMD的光源中，使用将合波激光光源的光纤的出射端部排列成阵列状的高亮度的光纤阵列光源，因此就可以实现高输出并且具有较深焦点深度的曝光装置。 Further, since the light source illuminating the DMD using the multiplexed outgoing end of the optical fiber of the laser light source arranged in an array-shaped optical fiber array light source of high brightness, and therefore it can achieve high output and has a deeper depth of focus of the exposure apparatus. 另外，通过各光纤光源的输出变大，为了获得所需的输出而必需的光纤光源数就减少，从而实现了曝光装置的低成本化。 Further, the output of each fiber source becomes large, the number of optical fibers in order to obtain a desired light output is reduced while necessary to achieve the cost reduction of the exposure apparatus.

特别是，本实施方式中，由于将光纤出射端的包层直径设为小于入射端的包层直径，因此发光部直径变得更小，从而可以实现光纤阵列光源的高亮度化。 In particular, in this embodiment, since the diameter of the fiber cladding exit end of the cladding diameter is set smaller than the entrance end of the light-emitting portion becomes smaller in diameter, thereby enabling the fiber array light source of high brightness. 这样，就可以实现具有更深焦点深度的曝光装置。 Thus, it is possible to achieve exposure apparatus having a deeper depth of focus. 例如，即使在束径1μm以下、析像度0.1μm以下的超高析像度曝光的情况下，也可以获得较深的焦点深度，从而可以实现高速并且高精细的曝光。 For example, even in the case where the beam diameter 1μm or less, resolution ultrahigh resolution 0.1μm or less exposure to be obtained deeper depth of focus, thereby enabling high-speed and high-precision exposure. 所以，适于需要高析像度的薄膜晶体管(TFT)的曝光工序。 Therefore, a thin film transistor is adapted to the need of a high resolution (TFT) exposure step.

下面，对以上说明的曝光装置的变形例等进行说明。 Next, a modified example of the exposure apparatus, etc. described above will be described.

[曝光装置的用途]所述的曝光装置例如可以适用于印刷配线基板(PWB；Printed WiringBoard)的制造工序的干式·薄膜·抗蚀层(DFR；Dry Film Resist)的曝光、液晶显示装置(LCD)的制造工序的滤色片的形成、TFT的制造工序的DFR的曝光、等离子·显示器·面板(PDP)的制造工序的DFR的曝光等用途中。 The exposure apparatus [exposure apparatus use], for example, can be applied to the printed wiring board (PWB; Printed WiringBoard) of the manufacturing process of the dry film · · resist (DFR; Dry Film Resist) exposure, the liquid crystal display device DFR exposure color filter is formed (LCD) fabrication process, TFT manufacturing process of DFR exposure, plasma · · display panel (PDP) manufacturing process or the like applications.

另外，所述的曝光装置也可以在利用激光照射使材料的一部分蒸发、飞散等而除去的激光切除或烧结、光刻等各种激光加工中使用。 Further, the exposure apparatus may be using a portion of the material of the laser irradiation evaporation, scattering, etc. to remove the various laser sintering or laser ablation, photolithography, etc. used in processing. 所述的曝光装置由于可以实现高输出，高速度并且长焦点深度的曝光，因此可以在利用激光切除等的微细加工中使用。 Since the exposure apparatus can achieve high output, high speed and long exposure depth of focus, so you can use such as by laser ablation in microfabrication. 例如，在不进行显像处理而利用切除按照图案将抗蚀层除去而制成PWB时，或不使用抗蚀层而直接用切除来形成PWB的图案时，可以使用所述的曝光装置。 For example, when developing treatment without the use of the pattern cut according to the removal of the resist layer is made PWB, with or without removal of the resist layer is formed by directly patterning the PWB, said exposure apparatus can be used. 另外，在将多个溶液的混合、反应、分离、检测等集成在玻璃或塑料芯片上的实验室芯片的槽宽度数十μm的微小流路的形成中也可以使用。 Further, when the groove width of the mixed solution of a plurality of the reaction, separation, detection integrated chip on glass or plastic laboratory chip tens μm of minute flow paths are formed may also be used.

特别是，所述的曝光装置由于在光纤阵列光源中使用GaN类半导体激光器，因此可以适用于所述的激光加工。 In particular, due to the use of the exposure apparatus GaN-based semiconductor laser in the optical fiber array light source, and therefore it can be applied to the laser processing. 即，GaN类半导体激光器可以进行短脉冲驱动，在激光切除等中也可以获得足够的功率。 That is, GaN-based semiconductor laser can be driven a short pulse, the laser ablation or the like can be obtained sufficient power. 另外，由于为半导体激光器，因此与驱动速度较慢的固体激光器不同，可以实现循环频率10MHz左右的高速驱动，从而可以实现高速曝光。 Further, since the semiconductor laser, and therefore different from the solid-state laser drive slower, can cycle frequency of about 10MHz in the high-speed driving, which can achieve high-speed exposure. 另外，由于金属的波长400nm附近的激光的光吸收率大，容易进行向热能的转换，因此可以高速地进行激光切除等。 Further, since the light absorption of the laser wavelength near 400nm metal is large, easily converted to thermal energy, can be performed at high speed laser ablation and the like.

而且，在将为了对TFT的图案处理中使用的液体抗蚀层或滤色片进行图案处理而使用的液体抗蚀层曝光时，为了消除由氧阻碍造成的感光度降低(去敏作用)，最好在氮气气氛下将被曝光材料曝光。 Further, when the liquid to the resist layer on the liquid layer or color filter resist used in patterning of the TFT is patterned using exposure and processing, in order to eliminate the sensitivity reduction caused by the obstruction of oxygen (desensitization effect), exposure of the material to be exposed is preferably under a nitrogen atmosphere. 通过在氮气气氛下进行曝光抑制光聚合反应的氧阻碍，就可以使抗蚀层高敏感化，从而可以实现高速曝光。 By light exposure to inhibit the polymerization reaction in a nitrogen atmosphere oxygen obstacle, it can make storey sensitive resist, thereby enabling high-speed exposure.

另外，在所述的曝光装置中，可以使用利用曝光直接记录信息的光子模式感光材料、用因曝光而产生的热记录信息的热模式感光材料的任意一种。 In addition, the exposure apparatus described, you can use direct recording by the exposure the photon mode photosensitive material information with any heat generated by exposure mode photosensitive material thermal recording information. 当使用光子模式感光材料时，在激光装置中使用GaN类半导体激光器、波长转换固体激光器等，当使用热模式感光材料时，在激光装置中使用AlGaAs类半导体激光器(红外激光器)、固体激光器。 When a photon mode photosensitive material, used in the laser apparatus GaN-based semiconductor lasers, wavelength conversion solid laser, etc., when using the heat mode photosensitive material, using the AlGaAs-based semiconductor lasers (infrared lasers) in the laser device, solid-state lasers.

[其他的空间调制元件]所述的实施方式中，虽然对将DMD的微镜部分地驱动的例子进行了说明，但是即使使用在与特定方向对应的方向的长度比与所述特定方向交叉的方向的长度更长的基板上以2维形状排列了反射面的角度可以与各个控制信号对应地变更的多个微镜的细长的DMD，由于控制反射面的角度的微镜的个数变少，因此可以同样地加快调制速度。 [Other spatial modulator device] according to the embodiment, although the portion of the DMD micromirror driving example has been described, but even with the use of a specific direction corresponding to the direction of the length ratio of the specific direction intersecting the longitudinal direction of the longer-dimensional shape of the substrate 2 aligned to the angle of the reflecting surface may be a plurality of elongated DMD micromirror respective control signals corresponding to the change of the number of control due to the angle of the reflecting surface of the mirror becomes less, it is possible to speed up the modulating speed in the same manner.

所述的实施方式中，虽然作为空间调制元件对具有DMD的曝光头进行了说明，但是，例如在使用MEMS(Micro Electro Mechanical Systems)类型的空间调制元件(SLM；Spacial Light Modulator)或利用电光学效应将透过光调制的光学元件(PLZT元件)或液晶光快门(FLC)等MEMS类型以外的空间调制元件的情况下，由于通过在排列于基板上的全部象素部中使用一部分的象素部，可以加快每1个象素、每1条主扫描线的调制速度，因此可以获得同样的效果。 The embodiments, although as the spatial modulation element of the exposure head having DMD has been described, but, for example, the use of MEMS (Micro Electro Mechanical Systems) type spatial modulation element (SLM; Spacial Light Modulator) or the use of electro-optic Effects of the case where the optical modulator through an optical element (PLZT element) or liquid crystal light shutter (FLC) and other than the MEMS type spatial modulation element, since by all pixel portions arranged on the substrate used in a part of the pixel unit, per 1 pixel can speed, the modulation rate per one main scanning line, the same effect can be obtained.

作为MEMS类型的空间调制元件，例如可以使用将具有带状的反射面并且可以与控制信号对应地移动的可动光栅、具有带状的反射面的固定光栅交互地并列配置多个而构成的光栅光阀(GLV)元件、将GLV元件排列成阵列状的光阀阵列。 MEMS type spatial grating as modulation element, for example, using a reflection surface having a band-like and may be configured with a control signal corresponding to the movement of the movable grating strip having a reflecting surface fixed grating plurality of alternately arranged in parallel light valve (GLV) element, the GLV elements are arranged in an array of light valve array.

而且，所谓MEMS是将利用以IC制造程序为基础的微细加工技术制造的微细尺寸的传感器、促动器以及控制电路集成化了的微细系统的总称，所谓MEMS类型的空间调制元件是指，由利用了静电的电气机械动作驱动的空间调制元件。 Moreover, so-called MEMS is utilized to IC manufacturing process based microfabrication technology to produce fine sized sensors, actuators, and general control of the integrated circuit is fine system, the so-called MEMS type spatial modulation element refers to the use of the static electrical machinery movement driven spatial modulation element.

[其他的曝光方式]既可以如图18所示，与所述的实施方式相同地，用扫描器162向X方向的1次的扫描将感光材料150的全面曝光，也可以如图19(A)及(B)所示，按照在利用扫描器162对感光材料150向X方向扫描后，将扫描器162向Y方向移动1步，向X方向进行扫描的方式，反复进行扫描和移动，从而用多次的扫描将感光材料150的全面曝光。 [Other exposure mode] either 18, and according to the same manner as the embodiment, the scanner 162 scans the full exposure of the photosensitive material 150 in the X direction, a second to be as shown in Figure 19 (A ) and (B), according to 162 pairs in the light-sensitive material by a scanner 150 to scan in the X direction, the scanner 162 will move one step in the Y direction, the X direction scanning mode, scanning and repeatedly to move, thereby by repeatedly scanning the overall exposure of the photosensitive material 150. 而且，该例中，扫描器162具有18个曝光头166。 Further, in this embodiment, the scanner 162 exposing head 18 having 166.

[其他的曝光装置(光源)]所述的实施方式中，虽然对使用具有多个合波激光光源的光纤阵列光源进行了说明，但是激光装置并不限定于将合波激光光源阵列化了的光纤阵列光源。 [Other exposure apparatus (light source)] described embodiments, although the use of an optical fiber array having a plurality of multiplexed laser light source has been described, but is not limited to the laser device multiplexed laser light source of the array of fiber array light source. 例如，可以使用将具备从具有1个发光点的单一的半导体激光器中入射的激光射出的1条光纤的光纤光源阵列化了的光纤阵列光源。 For example, with optical light incident from a single semiconductor laser having a light emitting point of the laser light emitted from an array of optical fibers of the fiber array light source. 但是，更理想的是，采用焦点深度被加深的合波激光光源。 However, more preferably, the depth of focus is deepened using multiplexed laser light source.

另外，作为具有多个发光点的光源，例如，如图20所示，可以使用在加热块100上，排列了多个(例如7个)芯片状的半导体激光器LD1～LD7的激光器阵列。 Further, as a light source having a plurality of light emitting points, for example, shown in Figure 20, it may be used on the heating block 100, arranged in a plurality (e.g., seven) chip-like semiconductor lasers LD1 ~ LD7 of the laser array. 另外，已知有图21(A)所示的将多个(例如5个)发光点110a沿特定方向排列的芯片状的多空腔激光器110。 Further, there are known 21 (A) shown in FIG plurality of (e.g., five) light emitting points 110a are arranged along a multi-cavity laser like chip 110 in a particular direction. 多空腔激光器110与排列芯片状的半导体激光器的情况相比，由于可以将发光点以优良的位置精度排列，因此很容易将从各发光点射出的激光束合波。 Multi-cavity laser 110 as compared with the case of the arrangement of the semiconductor laser chip-like, since the light-emitting point with good positional accuracy of the arrangement, it is easy to spot from the light-emitting laser beam emitted combiner. 但是，当发光点变多时，由于在激光器制造时在多空腔激光器110中容易产生弯曲，因此发光点110a的个数优选设为5个以下。 However, when the light emitting point change for a long time, since the lasers are manufactured in multi-cavity laser 110 is prone to bend, so the number of light emitting point 110a is preferably set to 5 or less.

本发明的曝光头中，可以将该多空腔激光器110、或如图21(B)所示在加热块100上将多个多空腔激光器110沿与各芯片的发光点110a的排列方向相同的方向排列的多空腔激光器阵列作为激光装置(光源)使用。 The exposure head of the present invention, the multi-cavity laser 110 may be, or as shown in 21 (B) shown in the same multi-cavity laser 110 along a plurality of light emitting points arranged in each chip 110a in the direction of the heating block 100 will multi-cavity laser array arranged in the direction of the laser device (light source) used.

另外，合波激光光源并不限定于将从多个芯片状的半导体激光器中射出的激光合波的光源。 In addition, co-wave laser light source is not limited to a plurality of chips from a semiconductor laser that emits a laser-like co-wave light. 例如，如图22所示，可以使用具备具有多个(例如3个)发光点110a的芯片状的多空腔激光器110的合波激光光源。 For example, as shown in Figure 22, it may be used with having a plurality of (e.g., three) multi-cavity light emitting point 110a of the laser chip form the multiplexed laser light source 110. 该合波激光光源具有多空腔激光器110、1条多模式光纤130、聚光透镜120。 The co-wave laser light source with a multi-cavity laser 110,1-multi-mode optical fiber 130, a condenser lens 120. 多空腔激光器110例如可以用激发波长为405nm的GaN类激光二极管构成。 Multi-cavity laser 110 may be, for example an excitation wavelength of 405nm GaN-based laser diode.

所述的构成中，从多空腔激光器110的多个发光点110a中分别射出的激光束B分别被聚光透镜120聚光，向多模式光纤130的芯130a入射。 Constituting described, from the multi-cavity laser of the plurality of light emitting points 110a 110 respectively emitted laser beams B are condensed by a condenser lens 120, is incident to the core 130a of multimode optical fiber 130. 向芯130a入射的激光在光纤内传输，被合波为1条而射出。 The core 130a incident laser transmission in the optical fiber, is a combined wave and emitted.

通过将多空腔激光器110的多个发光点110a并排设置在与所述多模式光纤130的芯径大约相等的宽度内，并且作为聚光透镜120，使用与多模式光纤130的芯径大致相等的焦点距离的凸透镜或将来自多空腔激光器110的出射光束仅在与其活性层垂直的面内校准的棒式透镜，就可以提高激光束B向多模式光纤130的结合效率。 A plurality of multi-cavity laser by the light emitting point 110 and 110a arranged side by side in the multi-mode fiber core diameter 130 of approximately equal width, and a condenser lens 120, the use of multi-mode optical fiber with a core diameter substantially equal to 130 The focal length of the lens or from the multi-cavity laser beam 110 emitted perpendicular to the active layer only in its in-plane alignment of rod lens, you can increase the laser beam B to the multi-mode fiber coupling efficiency of 130.

另外，如图23所示，可以使用如下的合波激光光源，即，使用具有多个(例如3个)发光点的多空腔激光器110，具备在加热块111上将多个(例如9个)多空腔激光器110相互等间隔地排列的激光器阵列140。 Further, as shown in Figure 23, may be used as the multiplexed laser light source, i.e., having a plurality of (e.g., three) multi-cavity light emitting point of the laser 110, the heating block 111 will have a plurality of (e.g., 9 ) multi-cavity laser array laser 110 arranged at equal intervals from each other 140. 多个多空腔激光器110被沿与各芯片的发光点110a的排列方向相同的方向排列而固定。 A plurality of multi-cavity lasers 110 are arranged along a light emitting point of each chip arranged in the same direction 110a fixed direction.

该合波激光光源具有激光器阵列140、与各多空腔激光器110对应配置的多个透镜阵列114、配置于激光器阵列140和多个透镜阵列114之间的1条棒式透镜113、1条多模式光纤130、聚光透镜120。 The co-wave laser light source includes a laser array 140, and a plurality of multi-cavity laser lens arrays each arranged corresponding to 114 110, 140 is arranged between the laser array and a plurality of lens array 114 of a rod lens 117, 118 bar more -mode optical fiber 130, a condenser lens 120. 透镜阵列114具有与多空腔激光器110的发光点对应的多个微透镜。 Lens array 114 having multi-cavity laser light emitting point 110 corresponding to a plurality of microlenses.

所述的构成中，从多个多空腔激光器110的多个发光点10a中分别射出的各条激光束B在被棒式透镜113向特定方向聚光后，被透镜阵列114的各微透镜平行光化。 Constituting described, from a plurality of multi-cavity lasers of the plurality of light emitting points 10a 110 respectively each emitted laser beams B in a rod lens 113 after being condensed in a specific direction, by each microlens of the lens array 114 photochemical parallel. 被平行光化后的激光束L被聚光透镜120聚光，向多模式光纤130的芯130a入射。 The laser beam L is parallel to actinic after condensed by the condenser lens 120, is incident to the core 130a of multimode optical fiber 130. 向芯130a入射的激光在光纤内传输，被合波为1条而射出。 The core 130a incident laser transmission in the optical fiber, is a combined wave and emitted.

另外再示出其他的合波激光光源的例子。 Also again shows other examples of co-wave laser light source. 该合波激光光源如图24(A)及(B)所示，在近似矩形的加热块180上，搭载有光轴方向的剖面为L字形的加热块182，在2个加热块间形成收纳空间。 The multiplexed laser light source in FIG. 24 (A) and (B), in the substantially rectangular heat block 180, equipped with the optical axis direction is L-shaped cross-section heating block 182, between the two heat receiving block is formed space. 在L字形的加热块182的上面，以阵列状排列了多个发光点(例如5个)的多个(例如2个)多空腔激光器110被沿着与各芯片的发光点110a的排列方向相同的方向等间隔地排列而固定。 A plurality of L-shaped in the above heating block 182, arranged in an array of a plurality of light emitting points (e.g. five) of (e.g. two) multi cavity laser 110 and the light emitting point is along the arrangement direction of each chip 110a, intervals in the same direction are arranged fixed.

在近似矩形的加热块180上形成有凹部，在加热块180的空间侧上面，多个发光点(例如5个)被排列为阵列状的多个(例如2个)的多空腔激光器110，以其发光点位于与配置在加热块182的上面上的激光器芯片的发光点相同的铅直面上的方式而被配置。 Heating at approximately rectangular block 180 is formed with a recess in the heating space side upper block 180, a plurality of light emitting points (e.g., 5) are arranged in an array of a plurality (e.g. two) multi cavity lasers 110, its luminous point is configured in the same manner and in the vertical plane above the heating block 182 of the light-emitting point of the laser chip is configured.

在多空腔激光器110的激光出射侧配置有与各芯片的发光点110a对应地排列了校准透镜的校准透镜阵列184。 In the multi-cavity laser exit side of the laser 110 is disposed with the light emitting point 110a corresponding to the respective chip are arranged a collimator lens 184 collimating lens array. 校准透镜阵列184被按照使各校准透镜的长度方向与激光束的束散角大的方向(快轴方向)一致、各校准透镜的宽度方向与束散角小的方向(慢轴方向)一致的方式配置。 Lens is calibrated in accordance with the respective longitudinal direction of the laser beam in the direction of beam divergence angle is large (fast axis direction), the width directions of the collimating lens and the beam divergence angle is small in the direction (slow axis direction) uniform alignment of the lens array 184 mode configuration. 通过像这样将校准透镜阵列化而一体化，就可以提高激光的空间利用效率而实现合波激光光源的高输出化，并且可以减少部件数目而实现低成本化。 By calibrating the like of the lens array and the integration can be improved and the space utilization efficiency of the laser beam combiner to achieve high output of the laser light source, and the number of parts can be reduced and the cost can be reduced.

另外，在校准透镜阵列184的激光出射侧，配置有1条多模式光纤130、在该多模式光纤130的入射端将激光束聚光而结合的聚光透镜120。 Further, in the calibration of the lens array laser 184 exit side, is disposed over one-mode optical fiber 130, the multi-mode optical fiber entrance end 130 of the laser beam converging condenser lens 120 incorporated.

所述的构成中，将从配置在加热块180、182上的多个多空腔激光器110的多个发光点10a中分别射出的各条激光束B，利用校准透镜阵列184平行光化，利用聚光透镜120聚光，向多模式光纤130的芯130a入射。 Constituting described, from the heated block 180, 182 arranged on a plurality of multi-cavity lasers of the plurality of light emitting points 10a 110 respectively each emitted laser beams B, the lens array 184 using the calibration actinic parallel using a condenser lens 120 is condensed to a multimode optical fiber 130a is incident 130. 向芯130a入射的激光在光纤内传输，被合波为1条而射出。 The core 130a incident laser transmission in the optical fiber, is a combined wave and emitted.

该合波激光光源如上所述，利用多空腔激光器的多级配置和校准透镜的阵列化，特别能够实现高输出化。 The multiplexed laser light source as described above, the use of multi-stage multi-cavity laser array configuration and calibration of the lens, especially a high output can be achieved. 由于通过使用该合波激光光源，可以构成更高亮度的光纤阵列光源或束光纤光源，因此特别适于作为构成本发明的曝光装置的激光光源的光纤光源。 Since by using this multiplexed laser light source, an optical fiber may be formed higher brightness arrays or bundles of optical fibers light source, it is particularly suitable as a laser light source constituting the present invention, the fiber source of the exposure device.

而且，可以将所述的各合波激光光源收纳在套盒内，构成将多模式光纤130的出射端部从该套盒引出的激光器模块。 Further, each of the multiplexed laser light sources are housed within the sleeve, laser module constituting the exit end of the multimode fiber 130 drawn from the kit.

另外，所述的实施方式中，虽然对在合波激光光源的多模式光纤的出射端结合芯径与多模式光纤相同并且包层直径小于多模式光纤的其他的光纤而实现光纤阵列光源的高亮度化的例子进行了说明，但是，例如也可以如图29所示，将包层直径为125μm、80μm、60μm等多模式光纤30在出射端不结合其他的光纤地使用。 Further, in the embodiment, although the multi-mode fiber multiplexed laser light source combined with the exit end of the core diameter and the same multi-mode optical fiber and the other fiber multimode fiber and the cladding diameter is smaller than the high fiber array light source luminance example has been described, but, for example, as shown in Fig 29, the use of cladding diameter of 125μm, 80μm, 60μm and other multi-mode optical fiber 30 at the exit end of the optical fiber does not bind to the other.

[光量分布修正光学系统]在所述的实施方式中，在曝光头中使用由1对组合透镜构成的光量分布修正光学系统。 [Light amount distribution correcting optical system] In the embodiment described, the amount of light by the use of a combination of one pair of lenses distribution correcting optical system of the exposure head. 该光量分布修正光学系统按照如下方式修正，即，在按照使周边部的光束宽度与接近光轴的中心部的光束宽度的比，与入射侧相比在出射侧一方更小的方式，改变各出射位置的光束宽度，将来自光源的平行光束向DMD照射时，使被照射面上的光量分布近似均一。 The light amount distribution correcting optical system is corrected in the following manner, i.e., in accordance with the width of the peripheral portion of the beam near the optical axis and the beam width than the central portion, as compared to the incident side at the exit side of the smaller one way, changing the exit position the beam width, the parallel light beam from the light source when irradiated to DMD, so is the amount of light irradiated surface of distribution is approximately uniform. 下面，对该光量分布修正光学系统的作用进行说明。 Next, the light amount distribution correcting optical system are described below.

首先，如图25(A)所示，对在入射光束和出射光束中，其整体的光束宽度(全光束宽度)H0、H1相同的情况进行说明。 First, in FIG. 25 (A) as shown in the incident light beam to the exit beam, and its overall beam width (full beam width) H0, H1 and the same will be described. 而且，在图25(A)中，以符号51、52表示的部分是将光量分布修正光学系统的入射面及出射面假想地表示的部分。 Further, in FIG. 25 (A), a portion indicated by symbol 51, 52 is a light amount distribution correcting optical system is incident surface and exit surface imaginary part denoted.

在光量分布修正光学系统中，将向接近光轴Z1的中心部入射的光束、向周边部入射的光束的各自的光束宽度h0、h1设为相同的宽度(h0＝h1)。 In the light amount distribution correcting optical system, it will be close to the center portion of the incident light beam optical axis Z1, an incident light beam to the peripheral portion of the respective beam width h0, h1 is set to the same width (h0 = h1). 光量分布修正光学系统相对于在入射侧相同的光束宽度h0、h1的光，按照对于中心部的入射光束将其光束宽度h0放大，相反，对于周边部的入射光束，将其光束宽度h1缩小的方式实施作用。 Light amount distribution correcting optical system with respect to the incident side of the same beam width h0, h1 light according to the incident light beam center portion of its beam width h0 amplification, contrary, for the incident light beam peripheral portion, which beam width h1 reduced implementation mode of action. 即，对于中心部的出射光束的宽度h10、周边部的出射光束的宽度h11，使h11＜h10。 That is, the central portion of the light beam width h10, h11 outgoing beam width of the peripheral portion, so h11 <h10. 当用光束宽度的比率表示时，出射侧的周边部的光束宽度与中心部的光束宽度的比「h11/h10」，小于入射侧的比(h1/h0＝1)((h11/h10)＜1)。 As indicated by the beam width ratio, the light beam a beam width of the central portion of the peripheral portion of the outgoing side width ratio "h11 / h10", is smaller than the incident side ratio (h1 / h0 = 1) ((h11 / h10) < 1).

通过像这样改变光束宽度，就可以使通常光量分布变大的中央部的光束向光量不足的周边部扩散，从而不降低作为整体的光利用效率地将被照射面上的光量分布近似均一化。 By thus changing the width of the beam, it is possible to make generally light amount distribution becomes large beam central portion spread to insufficient light amount of the peripheral portion, so as not to decrease as a whole light use efficiency is the amount of light irradiated surface of the distribution of approximately uniform. 均一化的程度例如设为有效区域内的光量不均在30％以内，优选在20％以内。 The degree of uniformity of the effective light amount is set such as unevenness in the region within 30%, preferably within 20%.

利用此种光量分布修正光学系统的作用、效果，在入射侧和出射侧，都与在改变整体的光束宽度的情况(图25(B)、(C))下相同。 By the action of this light amount distribution correcting optical system, the effect on the incident side and exit side, are the same as in the case of changing the overall width of the beam (FIG. 25 (B), (C)) at.

图25(B)表示将入射侧的整体的光束宽度H0“缩小”为宽度H2而射出的情况(H0＞H2)。 FIG. 25 (B) shows the overall beam width H0 incident side "narrow" width H2 case and emitted (H0> H2). 在此种情况下，光量分布修正光学系统使在入射侧为相同的光束宽度h0、h1的光在出射侧，中央部的光束宽度h10要大于周边部，反过来说，使周边部的光束宽度h11小于中心部。 In this case, the light amount distribution correcting optical system at the incident side of the same beam width h0, h1 at the exit side of the light beam width of the center portion is greater than the peripheral portions h10, conversely, the width of the peripheral portion of the beam h11 is less than the central portion. 当以光束的缩小率考虑时，实施使对中心部的入射光束的缩小率小于周边部，使对周边部的入射光束的缩小率大于中心部的作用。 When the reduction rate of the beam to be considered, so that the implementation of the center portion of the incident light beam is reduced less than the peripheral portion, so that the incident light beam on the peripheral portion of the reduction rate is greater than the effect of the center portion. 该情况下，周边部的光束宽度与中心部的光束宽度的比「H11/H10」，与入射侧的比(h1/h0＝1)相比就会变小((h11/h10)＜1)。 In this case, the beam and the beam width of the central portion than the peripheral portion of the width of the "H11 / H10", and the incident side ratio (h1 / h0 = 1) will be smaller compared to ((h11 / h10) <1) .

图25(C)表示将入射侧的整体的光束宽度H0放大为宽度H3而射出的情况(H0＜H3)。 FIG. 25 (C) shows the overall beam width H0 incident side of the case is enlarged and the width H3 emitted (H0 <H3). 在此种情况下，光量分布修正光学系统也使在入射侧为相同的光束宽度h0、h1的光在出射侧，中央部的光束宽度h10与周边部相比变大，反过来说，使周边部的光束宽度h11与中心部相比变小。 In this case, the light amount distribution correcting optical system is also the same in the incident side beam width h0, h1 at the exit side of the light beam width of the center portion h10 becomes large compared with the peripheral portion, conversely, the peripheral h11 beam width portion compared with the center portion becomes small. 当用光束的放大率考虑时，实施使对中心部的入射光束的放大率与周边部相比增大，使对周边部的入射光束的放大率与中心部相比缩小的作用。 When considering the magnification by the beam, so that the implementation of the peripheral portion of the incident light beam and the magnification of the central portion is increased as compared to that of the central portion of the incident light beam and the magnification of the peripheral portion compared to the reduced effect. 该情况下，周边部的光束宽度与中心部的光束宽度的比「h11/h10」，与入射侧的比(h1/h0＝1)相比变小((h11/h10)＜1)。 In this case, the beam and the beam width of the central portion than the peripheral portion of the width "h11 / h10", and the ratio of incident side (h1 / h0 = 1) becomes smaller than ((h11 / h10) <1).

像这样，由于光量分布修正光学系统改变各出射位置的光束宽度，使周边部的光束宽度与接近光轴Z1的中心部的光束宽度的比与入射侧相比在出射侧的一方更小，因此在入射侧为相同的光束宽度的光在出射侧，中央部的光束宽度与周边部相比就会变大，周边部的光束宽度与中心部相比变小。 As described above, since the light amount distribution correcting optical system of varying beam width of each exit position, the beam width of the peripheral portion compared with the ratio of the incident side close to the optical axis Z1 of the beam width of the central portion is smaller in one of the exit side, thus In the same light incident side of the beam width of the exit side, the beam width of the central portion of the peripheral portion becomes large compared to the beam width of the central portion and the peripheral portion becomes smaller in comparison. 这样，就可以使中央部的光束向周边部扩散，从而可以不降低作为光学系统整体的光的利用效率地形成光量分布被近似均一化了的光束截面。 Thus, the central portion of the beam can be diffused toward the peripheral portion, so that the optical system may not be reduced as a whole is formed utilization efficiency of light is approximately uniform light amount distribution of the beam cross-section.

下面，表示作为光量分布修正光学系统使用的1对组合透镜的具体的透镜数据的1个例子。 The following represents a light amount distribution correcting one pair of a specific example of a combination of lens optical lens data system. 该例中，表示光源为激光阵列光源时那样，出射光束的截面上的光量分布为高斯分布时的透镜数据。 In this example, as indicated, the lens data of the light amount of light beam cross section on the Gaussian distribution of the light source when the light source is a laser array. 而且，在单模式光纤的入射端连接了1个半导体激光器的情况下，来自光纤的射出光束的光量分布成为高斯分布。 Further case, the entrance end of the single-mode optical fiber connected to a semiconductor laser, the amount of light beam emitted from the optical fiber distribution becomes Gaussian distribution. 本实施方式也可以适用于此种情况。 The present embodiment can be applied to this case. 另外，也可以适用于由于将多模式光纤的芯径缩小而与单模式光纤的构成近似等使得与光轴接近的中心部的光量大于周边部的光量的情况。 Further, since the may be applied to multi-mode fiber core diameter and narrow single-mode fiber constituting approximately the like so that the light amount of the optical axis near the central portion in the case where the peripheral portion of the light amount.

在下述表1中表示基本透镜数据。 It shows basic lens data in Table 1 below.

[表1] [Table 1]

从表1可以看到，1对组合透镜由旋转对称的2个非球面透镜构成。 It can be seen from Table 1, one pair of lenses by a combination of two rotationally symmetric aspheric lens. 当将配置于光入射侧的第1透镜的光入射侧的面设为第1面，将光出射侧的面设为第2面时，第1面为非球面形状。 When disposed on the light incident side of the first lens of the light incident side surface as a first surface, the light emission side surface to the second surface, the first surface aspherical. 另外，当将配置于光出射侧的第2透镜的光入射侧的面设为第3面，将光出射侧的面设为第4面时，第4面为非球面形状。 In addition, when the configuration on the light exit side of the second lens of the light incident side surface to the third surface, the light emission side surface to the fourth surface, the fourth surface aspherical.

表1中，面编号Si表示第i个(i＝1～4)面的编号，曲率半径ri表示第i个面的曲率半径，面间隔di表示第i个面和第i+1个面的光轴上的面间隔。 In Table 1, the surface number Si denotes the i-th (i = 1 ~ 4) surface number, the radius of curvature ri represents a radius of curvature of the i-th surface, di represents the surface interval i-th surface and i + 1 planes surface spacing on the optical axis. 面间隔di值的单位为毫米(mm)。 Di interval value per unit of millimeter (mm). 折射率Ni表示具有第i个面的光学要素的对波长405nm的折射率的值。 Ni represents the refractive index has a value of i-th surface of the optical element refractive index wavelength 405nm.

[表2] [Table 2]

所述的非球面数据由表示非球面形状的下述式(A)的系数表示。 Aspheric data is represented by the coefficient represented by the following formula (A), the aspherical shape.

[数学式1]Z=C&CenterDot;&rho;21+1-K&CenterDot;(C&CenterDot;&rho;)2+&Sigma;l=310ai&CenterDot;&rho;2&CenterDot;&CenterDot;&CenterDot;&CenterDot;&CenterDot;&CenterDot;(A)]]>在所述式(A)中将各系数如下定义。 [Mathematical Formula 1] Z = C & CenterDot; & rho; 21 + 1-K & CenterDot; (C & CenterDot; & rho;) 2 + & Sigma; l = 310ai & CenterDot; & rho; 2 & CenterDot; & CenterDot; & CenterDot; & CenterDot; & CenterDot; & CenterDot; (A)]] > In (A) of the formula in the coefficients defined as follows.

Z：从位于距光轴高度ρ的位置的非球面上的点开始，向非球面的顶点的切面(与光轴垂直的平面)下拉的垂线的长度(mm)ρ：距光轴的距离(mm)K：圆锥系数C：近轴曲率(l/r，r：近轴曲率半径)ai：第i次(i＝3～10)的非球面系数在表2所示的数值中，记号“E”表示其后的数值为以10为底的“幂指数”，表示用该以10为底的指数函数表示的数值乘以 “E”之前的数值。 Z: from the point of non-spherical surface at a position from the optical axis height ρ the beginning, the length perpendicular to the aspherical vertex section (plane perpendicular to the optical axis) drop-down (mm) ρ: distance from the optical axis (mm) K: conical coefficient C: paraxial curvature (l / r, r: paraxial radius of curvature) ai: i-th (i = 3 ~ 10) aspheric coefficient values ​​shown in Table 2, the symbol "E" represents the subsequent value of 10 for the end of "exponential", he said the value to 10 by the end of the exponential function is multiplied by the "E" before the number. 例如，如果是「1.0E-02」，则表示「1.0×10-2」。 For example, if "1.0E-02" indicates "1.0 × 10-2."

图27表示利用所述表1及表2所示的1对组合透镜所得的照明光的光量分布。 Figure 27 shows the use of the Table 1 and one pair of light amount of illumination light distribution obtained by a combination of lenses shown in Table 2. 横轴表示离开光轴的坐标，纵轴表示光量比(％)。 The horizontal axis represents the coordinates from the optical axis, and the vertical axis represents light amount ratio (%). 而且，为了比较，图26中表示未进行修正时的照明光的光量分布(高斯分布)。 Further, for comparison, FIG. 26 shows the light amount correction is not performed when the illumination light distribution (Gaussian distribution). 从图26及图27可以看到，通过用光量分布修正光学系统进行修正，与未进行修正的情况相比，可以获得近似均一化了的光量分布。 As seen in Figure 26 and 27, through the light volume distribution correcting optical system is corrected, as compared with the case of not correcting the amount of light can be approximated by a uniform distribution. 这样，就可以不降低曝光头的光的利用效率地用均一的激光进行没有不均的曝光。 Thus, it can not reduce the efficiency of the light exposure head to use a uniform without any unevenness of laser exposure. 而且，也可以使用一般使用的loadintegrator或flyeyelense等。 Moreover, you can also use loadintegrator or flyeyelense commonly used and so on.

[其他的成像光学系统]所述的实施方式中，虽然在曝光头中使用的DMD的光反射侧，作为成像光学系统配置了2组透镜，但是也可以配置将激光放大成像的成像光学系统。 Embodiment [Other imaging optical system] described, although the use of light reflection in the DMD exposure head side, the imaging optical system is configured as a group lens 2, it is also possible to configure the laser amplifying an imaging optical system. 通过放大被DMD反射的光束线的截面积，就可以将被曝光面的曝光区域面积(图像区域)放大为所需的大小。 By amplifying the reflected beam line DMD cross-sectional area, it can be an area of ​​exposure (image area) is exposed surface enlarged to the desired size.

例如，可以将曝光头如图28(A)所示，用DMD50、向DMD50照射激光的照明装置144、将被DMD50反射的激光放大成像的透镜系统454、458、与DMD50的各象素对应地配置了多个微透镜474的微透镜阵列472、与微透镜阵列472的各微透镜对应地设置了多个小孔478的小孔阵列476、将通过了小孔的激光在被曝光面56上成像的透镜系统480、482构成。 Laser amplifying system such as an imaging lens, the exposure head may be as shown in Figure 28 (A) shown by DMD50, the laser beam illumination device 144 is irradiated DMD50, 454, 458 will be reflected DMD50, and each pixel corresponds to DMD50 configuring the plurality of microlenses 474 of the microlens array 472, and the microlens array 472 is provided corresponding to each microlens of the array of the plurality of apertures 478 apertures 476, through the apertures in the exposed surface of the laser 56 480, 482 constitute an imaging lens system.

该曝光头中，当从照明装置144照射激光时，被DMD50向开态方向反射的光束线的截面积就被透镜系统454、458放大为数倍(例如2倍)。 The exposure head, when irradiated with laser light from the lighting device 144, in the opening cross-sectional area is DMD50 state direction of the reflected beam line was enlarged to multiple lens system 454, 458 (for example, 2 times). 被放大了的激光被微透镜阵列472的各微透镜与DMD50的各象素对应地聚光，通过小孔阵列476的对应的小孔。 The laser light is amplified for each pixel of each microlens of the microlens array 472 in correspondence with the DMD50 condenser, a corresponding array of apertures through the aperture 476. 通过了小孔的激光被透镜系统480、482在被曝光面56上成像。 Through the apertures 480, 482 laser-imaging lens system 56 is exposed on the surface.

该成像光学系统中，被DMD50反射的激光由于被放大透镜454、458放大为数倍而投影在被曝光面56上，因此整体的图像区域变大。 The imaging optical system, since the laser light reflected by DMD50 magnifying lens 454, 458 is enlarged and projected on a multiple of 56 to be exposed on the surface, so the overall image area becomes larger. 此时，如果未配置微透镜阵列472及小孔476，则如图28(B)所示，被投影在被曝光面56上的各束点BS的1个象素尺寸(点尺寸)就与曝光区域468对应地成为较大的尺寸，表示曝光区域468的清晰度的MTF(ModulationTransfer Function)特性就会降低。 In this case, if the microlens array 472 and the hole 476 is configured, as shown in 28 (B) shown are projected to be exposed on the surface 56 of a pixel size of each beam spot BS (point size) on the 468 corresponding to the exposed region becomes larger sizes, it indicates that the exposure area definition 468 MTF (ModulationTransfer Function) characteristics will be reduced.

另一方面，在配置了微透镜阵列472及小孔阵列476的情况下，被DMD50反射的激光被微透镜阵列472的各个微透镜与DMD50的各象素对应地聚光。 On the other hand, in the case of the configuration of the microlens array 472 and aperture array 476, the laser light is reflected by DMD50 each pixel the respective microlenses of the microlens array 472 in correspondence with the DMD50 condenser. 这样就会如图28(C)所示，即使在曝光区域被放大的情况下，也可以将各束点BS的点尺寸缩小为所需的大小(例如10μm×10μm)，从而可以防止MTF特性的降低而进行高精细的曝光。 This will in FIG. 28 (C), even when the exposure area is magnified in the case, may be the point of each beam spot BS downsizing of the desired size (e.g., 10μm × 10μm), the MTF characteristics can be prevented while a high-definition exposure is reduced. 而且，曝光区域468倾斜是因为，为了消除象素间的间隙而将DMD50倾斜配置。 Furthermore, because the exposure area 468 is inclined, in order to eliminate the gap between the pixel and the DMD50 inclined configuration.

另外，即使有因微透镜的像差造成的光束的变粗，也可以利用小孔按照使被曝光面56上的点尺寸为一定的大小的方式对光束进行整形，并且可以通过使之穿过与各象素对应地设置的小孔，防止相邻的象素间的干扰。 Further, even if thicker beams caused by the aberration of the microlens, can also be used according to the spot size of the hole so that the exposed surface 56 on the way to a certain size of the beam shaping, and can make it through the with apertures corresponding to each pixel is provided to prevent interference between adjacent pixels.

另外，由于通过在照明装置144中与所述实施方式相同地使用高亮度光源，从透镜458向微透镜阵列472的各微透镜入射的光束的角度变小，因此就可以防止相邻的象素的光束的一部分入射。 Further, since the same manner by using a high intensity light source and the illumination device 144 in the embodiment, the angle from the lens 458 is incident to each microlens of the microlens array 472 of the light beam becomes small, and therefore it is possible to prevent adjacent pixels The portion of the incident beam. 即，可以实现高消光比。 That is, you can achieve a high extinction ratio.

如上说明所示，本发明的曝光头及曝光装置具有空间光调制元件，起到了可以加快该空间光调制元件的调制速度而进行高速曝光的效果。 As described above, the exposure head and the exposure apparatus of the present invention having a spatial light modulation element, can speed up play a modulation speed of the spatial light modulator element and the effect of high-speed exposure.

(实施方式2)实施方式2是用被空间光调制元件与图像数据对应地调制了的光束将光固化性树脂曝光而形成3维模型的光造型装置的实施方式。 (Embodiment 2) Embodiment 2 is used by the spatial light modulation element and the image data corresponding to the modulated light beam exposing a photocurable resin to form a stereolithography apparatus of a third embodiment of the dimensional model.

[光造型装置]本发明的实施方式的光造型装置如图32所示，具有上方开口的容器156，在容器156内收纳有液状的光固化性树脂150。 Embodiment [stereolithography apparatus] of the present invention, an optical molding apparatus shown in FIG. 32, the container having a top opening 156, the container 156 is housed within a liquid photocurable resin 150. 另外，在容器156内，配置有平板状的升降载物台152，该升降载物台152被配置于容器156外的支撑部154支撑。 Further, in the container 156, arranged plate-shaped lifting stage 152, the lifting stage 152 is arranged outside the container 156 supported on the support portion 154. 在支撑部154上，设有雄螺纹部154A，该雄螺纹部154A被利用未图示的驱动马达可以旋转的导螺杆155螺合。 On the support portion 154 has male threaded portions 154A, 154A of the male thread portion 155 is screwed into the use of lead screw drive motor (not shown) can be rotated. 伴随着该导螺杆155的旋转，升降载物台152被升降。 With the rotation of the lead screw 155, lifting stage 152 is lifting.

在收纳于容器156内的光固化性树脂152的液面上方，箱状的扫描器162被将其长边方向朝向容器156的短边方向地配置。 Above the liquid level in the storage in the photo-curable resin within the container 156 152, the scanner 162 is box-shaped to the longitudinal direction of the vessel 156 of the short-side direction are arranged. 扫描器162被安装在短边方向的两个侧面上的2条支撑臂160支撑。 The scanner 162 is mounted on both sides of the short side of the two support arms 160 support. 而且，扫描器162与控制它的未图示的控制器连接。 Also, the scanner 162 connected to the control of its controller (not shown).

另外，在容器156的长边方向的两个侧面上，分别设有沿副扫描方向延伸的导引轨158。2条支撑臂160的下端部被可以沿着副扫描方向往复移动地安装在该导引轨158上。 Further, on both sides of the longitudinal direction of the container 156, are provided along the sub-scanning direction 158.2 extending guide rail portion 160 of the lower end of the support arm can be moved reciprocally mounted in the sub-scanning direction guide rail 158. 而且，在该光造型装置上，设有用于将扫描器162与支撑壁160一起沿着导引轨158驱动的未图示的驱动装置。 Moreover, on the light molding apparatus, a driving means for the scanner 162 together with the supporting wall 160 along the guide rail 158 drive (not shown).

扫描器162如图33所示，具有被排列成(例如3行5列)近似矩阵状的多个(例如14个)曝光头166。 The scanner 162 shown in Figure 33, has been arranged (e.g. 3 rows 5) approximate matrix form a plurality of (e.g., 14) exposing head 166. 该例中，由于与容器156的短边方向的宽度的关系，在第3行上配置了4个曝光头166。 In this example, since the relationship between the width of the short side of the container 156 in the third row is configured with four exposure heads 166. 而且，当表示排列在第m行第n列的各个曝光头时，表记为曝光头166mn。 Moreover, when expressed at various exposure heads arranged m-th row and n columns, represented as the exposure head 166mn.

曝光头166的曝光区域168为将副扫描方向作为短边的矩形。 Exposure head exposed regions 166 168 to the sub-scanning direction as the short side of the rectangle. 所以，伴随着载物台162的移动，在光固化性树脂152的液面上就被每个曝光头166形成带状的曝光完成区域(固化区域)170。 Therefore, along with the moving stage 162, the liquid photocurable resin 152 is formed on each exposure head 166 of the strip-like exposure region is completed (curing region) 170 is. 而且，表示配置在第m行的第n列的各个曝光头的曝光区域时，表记为曝光区域168mn。 Further, when each represents the exposure head arranged in the m-th row in the exposure area n-th column of the table referred to as the exposure area 168mn.

曝光头16611～166mn各自的构成、动作及变形例与实施方式1相同。 16611 ~ 166mn each exposure head structure, operation and modification of the same embodiment. 但是，GaN类半导体激光器LD1～LD7的波长频域更优选350～420nm。 However, GaN-based semiconductor lasers LD1 ~ LD7 wavelength in the frequency domain and more preferably 350 ~ 420nm. 从使用低成本的GaN类半导体激光器这一点考虑，特别优选波长408nm。 From the use of low-cost GaN-based semiconductor laser of this consideration, particularly preferably a wavelength of 408nm.

另外，在DMD50上，沿主扫描方向排列了800个微镜的微镜列被沿副扫描方向排列了600组，但是按照利用控制器仅驱动一部分的微镜列(例如800个×100列)的方式控制，在这一点上与实施方式1相同。 In addition, the DMD50, along the main scanning direction 800 micromirrors arrayed micromirror columns are arranged in a group of 600 sub-scanning direction, but only a part of the drive by the controller in accordance with micromirror columns (such as 800 × 100 columns) The mode control, the same as the first embodiment in this point.

所述的光造型装置中，与1层的曝光图案对应的图像数据被输入与DMD50连接的未图示的控制器，暂时储存在控制器内的帧存储器中。 In the stereolithography apparatus, and an exposure pattern layer corresponding to the image data input by the controller (not shown) connected to DMD50, temporarily stored in the frame memory controller. 该图像数据是将构成图像的各象素的浓度用2值(点的记录的有无)表示的数据。 (Point of presence or absence of record) data of the image data is represented by the concentration of each pixel constituting an image with binary.

扫描器162被未图示的驱动装置沿着导引轨158从副扫描方向的上游侧向下游侧以一定速度移动。 The scanner drive device 162 is not shown along the guide rail 158 from the upstream side to the downstream side of the sub-scanning direction at a constant speed. 当开始扫描器162的移动时，就会将储存在帧存储器中的图像数据每次多行地依次读出，基于被数据处理部读出的图像数据，对每个曝光头166生成控制信号。 When you start moving the scanner 162, the image data will be stored in the frame memory of each multi-line sequentially read out by the read data processing unit based on the image data, for each of the exposure head 166 generates a control signal. 此外，利用反射镜驱动控制部，基于所生成的控制信号，对每个曝光头166，对DMD50的微镜分别进行开关控制。 In addition, the use of a mirror drive control section, based on the control signal generated for each exposing head 166, respectively, of DMD50 micromirror switching control.

当从光纤阵列光源66向DMD50照射激光时，在DMD50的微镜为开状态时被反射的激光就会被透镜系统54、58在光固化性树脂150的液面(被曝光面)56上成像。 When the fiber array light source 66 to DMD50 irradiated with laser light, the laser microscope in DMD50 the open state will be reflected in the surface of the lens system 54, 58, 150 light-curable resin (by exposure surface) 56 on imaging . 这样，从光纤阵列光源66射出的激光对每个象素被开关，光固化性树脂150被与DMD50的使用象素数大约相同数目的象素单位(曝光区域168)曝光而固化。 Thus, emitted from the fiber array laser source 66 is switched for each pixel, a photocurable resin 150 is used with about the same number of pixels DMD50 number of pixel units (the exposure area 168) exposing cured. 另外，通过将扫描器162以一定速度移动，光固化树脂150的液面就会被副扫描，被每个曝光头166形成带状的固化区域170。 Further, by moving the scanner 162 at a constant speed, the photo-curable liquid resin 150 will be sub-scanning, each exposure head 166 is formed band-shaped cured region 170.

当利用扫描器162进行的1次的副扫描结束1层的固化时，扫描器162就被未图示的驱动装置沿着导引轨158复原至位于最上游侧的原点。 When using the scanner 162 scans a second sub-layer of the end of a cure, the scanner 162 drive is not shown to recover along the guide rail 158 located at the upstream side of the origin. 然后，利用未图示的驱动马达使导螺杆155旋转而使升降载物台152下降特定量，使光固化树脂150的固化部分下沉到液面下，将固化部分上方用液状的光固化性树脂150充满。 Then, the driving motor (not shown) so that rotation of the lead screw 155 leaving the lift stage 152 drops a specific amount, so that part of the photo-curable resin is cured to the lower surface 150 of the sink, the upper part with the cured photocurable liquid resin 150 is filled. 此外，当将下一层的图像数据输入与DMD50连接的未图示的控制器时，再次进行扫描器162的副扫描。 Further, when the controller next layer of the image data input and DMD50 connection (not shown), again the sub-scanning scanner 162. 像这样，通过反复进行副扫描的曝光(固化)和载物台的下降，层叠固化部分，就可以形成3维模型。 Thus, by repeating the sub-scanning exposure (curing) and falling laminated cured portion of the stage, it can form a three-dimensional model.

如上说明所示，本实施方式的光造型装置具有将沿主扫描方向排列了800个微镜的微镜列沿副扫描方向排列了600组的DMD，但是，由于按照利用控制器仅驱动一部分的微镜列的方式进行控制，因此与驱动全部的微镜列的情况相比，每1行的调制速度加快。 As described above, the present embodiment of the optical molding apparatus having a main scanning direction 800 micromirrors arrayed micromirrors DMD Group ranked 600 columns along the sub-scanning direction, however, as only a part of the drive by the controller in accordance with the way mirror control column, as compared with the case of driving all of the micromirrors column, the modulation rate per one line faster. 这样就可以实现高速的曝光、造型。 This enables high-speed exposure modeling.

另外，由于在照明DMD的光源中，使用将合波激光光源的光纤的出射端部排列成阵列状的高亮度的光纤阵列光源，因此就为高输出，并且可以获得较深的焦点深度，并且可以获得高光密度输出，因此就可以高速并且高精度地进行造型。 Further, since the light source illuminating the DMD, the use of the combined waves exit end of the optical fiber laser light source arranged in an array-like optical fiber array light source of high brightness, and therefore a high output, and can obtain a deeper depth of focus, and You can obtain a high optical density output, and therefore high-speed and high accuracy modeling. 另外，由于各光纤光源的输出变大，为了获得所需的输出而必需的光纤光源数目就会减少，从而可以实现光造型装置的低成本化。 Further, since the output of each fiber source becomes large, the number of optical fibers in order to obtain a desired light output will be reduced while necessary, thereby enabling cost reduction of the optical modeling apparatus.

特别是，本实施方式中，由于使光纤的出射端的包层直径小于入射端的包层直径，因此发光部直径变得更小，从而可以实现光纤阵列光源的进一步的高亮度化。 In particular, in this embodiment, since the cladding diameter of the optical fiber exit end is smaller than the entrance end of the cladding diameter, the diameter of the light-emitting portion becomes smaller, thereby enabling the fiber array light source further higher brightness. 这样就可以实现更加高精细的造型。 This can be achieved more high-precision modeling.

[激光器驱动方法]光纤阵列光源中所含的各GaN类半导体激光器既可以是连续驱动，也可以是脉冲驱动。 [Laser drive method] fiber array light source contained in each GaN-based semiconductor lasers can be either continuously driven, and may be pulse-driven. 通过用脉冲驱动的激光进行曝光，就可以防止热扩散，从而可以实现高速并且高精细的造型。 By performing the laser driving pulse exposure, heat diffusion can be prevented, thereby enabling high speed and high precision modeling. 脉冲宽度越短越好，优选1psec～100nsec，更优选1psec～300psec。 Pulse width as short as possible, preferably 1psec ~ 100nsec, more preferably 1psec ~ 300psec. 而且，GaN类半导体激光器难以产生被称为COD(Catastrophic Optical Damage)的光出射端面的破损，可靠性高，也可以容易地实现1psec～300psec的脉冲宽度。 Further, GaN-based semiconductor laser light is difficult to produce damage called COD (Catastrophic Optical Damage) outgoing end surface, high reliability, can be easily realized 1psec ~ 300psec pulse width.

[其他的曝光方式]一般来说，在形成3维模型的光造型方法中，会产生伴随着树脂的固化的聚合收缩、因固化时产生的聚合热而达到高温的树脂被冷却至常温而产生变形造成的固化收缩，由与这些固化相伴产生的收缩使造型物变形，从而有造型精度降低的问题。 [Other exposure mode] Generally, in the optical modeling method of forming a three-dimensional model, it will produce along with the curing of the resin polymerization shrinkage due to polymerization heat generated when a high temperature curing of the resin is cooled to room temperature to produce solidification shrinkage caused by solidification shrinkage and these accompanying disturbs the shape distortion, thereby reducing the problem of modeling accuracy. 特别是，在将包括多个象素的区域同时曝光(面曝光)而形成平板状的情况下，造型物会相对于层叠方向向下侧凸出地翘曲。 Particularly, in the case where a plurality of pixels including a region while exposure (surface exposure) is formed of a flat plate, the shaped object with respect to the stacking direction will be downward convex warped. 为了防止由此种固化收缩造成的变形的产生，最好将曝光区域分为多个区域而依次曝光。 In order to prevent the generation of distortion caused by the curing shrinkage of this, the exposure area is preferably divided into a plurality of areas sequentially exposed.

例如，通过对光固化树脂的同一液面进行多次扫描，在用第1次的扫描将造型形状的轮廓线曝光而使光固化性树脂固化后，用第2次以后的扫描将轮廓线的内部曝光而使光固化性树脂固化，就可以防止变形的产生。 For example, through the same liquid photocurable resin multiple scans, with the 1st scanning the shape of the shape of the contour lines leaving exposed photocurable resin after curing, with the second and subsequent scans the contour Internal exposure leaving the photo-curable resin is cured, it can prevent the generation of distortion.

另外，如图34(A)所示，也可以将曝光区域分割为多个象素，将该多个象素分为由不相邻的象素102构成的第1组、由不相邻的象素104构成的第2组2个组，对每1组进行扫描曝光。 Further, in FIG. 34 (A), the exposure area may be divided into a plurality of pixels, the pixels divided by a plurality of non-adjacent pixels 102 constituting the first group, not in the adjacent Group 2 two groups consisting of 104 pixels for each group of scanning exposure. 将象素102和象素104按照构成方格花纹的方式交互地排列。 The pixel 102 and the pixel 104 are alternately arranged in the manner of constituting the checkered pattern. 在图34(A)中表示了曝光区域的一部分，例如在使用具有100万象素的DMD的曝光头的情况下，可以与DMD的象素数对应地将曝光区域分割为100万个象素。 Shows a portion of the exposed region in FIG. 34 (A), for example in the case of using DMD having 1,000,000 pixels case exposing head, DMD may be the number of pixels corresponding to the exposure area is divided into one million pixels .

首先，用第1次的扫描如图34(B)所示，将属于第1组的象素102曝光，用第2次的扫描如图34(C)所示，将属于第2组的象素104曝光。 First, the 1st scan FIG 34 (B), the pixel 102 belonging to the first group of the exposure, the second scan with FIG. 34 (C) shown in the image belonging to the second group 104 prime exposure. 这样，就可以填充象素和象素的间隙，将光固化性树脂的液面的曝光区域的全面曝光。 In this way, you can fill in the gaps between pixel and pixel, the exposure level will be fully exposed areas of the photo-curable resin.

在第1次的扫描中被同时曝光的第1组的象素之间不相邻，在第2次扫描中被同时曝光的第2组的象素之间也不相邻。 At the 1st scan between non-adjacent pixels are simultaneously exposed to the first group, the second group is not between adjacent pixels are simultaneously exposed in the second scan. 由于像这样相邻的象素不会被同时曝光，因此就不会向相邻的象素传播由固化收缩造成的变形。 Because not be exposed like this while adjacent pixels, so it will not spread deformation caused by curing shrinkage caused to adjacent pixels. 即，在将曝光区域整体同时曝光的情况下，由固化收缩造成的变形随着在曝光区域中传播而变大，从而会产生相当多的变形，但是在该例中，固化收缩仅在1个象素的范围内产生，由固化收缩造成的变形不会向相邻的象素传播。 That is, in the case of simultaneous exposure of the whole exposure region, the deformation caused by the cure shrinkage in the exposed area with propagation becomes large, and thus may produce considerable distortion, but in this example, only one cure shrinkage produced within the scope of the pixel, the deformation caused by the curing shrinkage does not spread to adjacent pixels. 这样，就可以在叠层造型物中显著地抑制变形的产生，从而可以实现高精度的造型。 Thus, it is possible to significantly suppress the generation of deformation in the laminate shaped article, whereby the shape can be realized with high accuracy.

所述的实施方式的曝光装置中，可以利用扫描器的1次的扫描将光固化性树脂的液面用任意的图案曝光。 The embodiment of the exposure apparatus, the scanner 1 can scan the photocurable resin liquid with an arbitrary pattern exposure. 所以，就比较容易利用多次的扫描对被分割的每个区域进行曝光。 Therefore, it is easier to use multiple scans of each region is divided exposure.

[光固化性树脂]作为光造型中使用的液状的光固化性树脂，一般使用利用光自由基聚合反应固化的氨基甲酸丙烯酸酯类树脂、利用光阳离子聚合反应固化的环氧类树脂。 [Photocurable resin] As the shape of the light used in a liquid photocurable resin, generally used radical polymerization using light-curable urethane acrylate resin, cationic polymerization using light-curable epoxy-based resin. 另外，可以使用常温下处于凝胶状态、当利用激光照射赋予热能时则转化为溶胶状态的溶胶—凝胶转换型的光固化性树脂。 In addition, you can use at room temperature in a gel state, when the laser irradiation is converted into heat energy given sol sol - gel conversion-type light-curable resin. 使用溶胶—凝胶转换型的光固化性树脂的光造型方法中，由于在不是液状而是凝胶状态的造型面上进行曝光、固化，因此就在凝胶状的树脂中形成造型物，因而有不需要形成用于支撑造型物的支撑部分或连接部分的优点。 The method of stereolithography gel conversion-type light-curable resin, since the liquid but not the shape of the exposed surface of the gel state, curing, and therefore the shape thereof is formed in a gel-like resin, which - using the sol there is no need to form part of the merit for supporting or connecting portion of the support of the shaped object.

在对特定区域同时进行曝光的行曝光、区域曝光的情况下，优选使用在所述的溶胶—凝胶转换型的光固化性树脂中添加了热传导性的填充剂的树脂。 In specific areas simultaneously exposing the exposure, the exposure of the case of the region, is preferably used in the sol - gel conversion-type light-curable resin is added to the thermal conductivity of the filler resin. 通过添加热传导性的填充剂就可以发挥热扩散性，防止造型物的热变形的产生。 By adding a thermally conductive filler can play thermal diffusivity, thermal deformation preventing generation shaped object. 特别是，溶胶—凝胶转换型的光固化性树脂中，由于可以使与通常的树脂不同的填充剂不沉降而均一地分散，因此就可以维持热扩散性。 In particular, the sol - gel conversion-type light-curable resin, since the resin can make different usual filler uniformly dispersed without settling, and therefore can maintain the thermal diffusivity.

(实施方式3)实施方式3是用与图像数据对应地被空间光调制元件调制了的光束使粉末烧结而形成烧结层，将该烧结层层叠而形成由粉末烧结体构成的3维模型的叠层造型装置的实施方式。 (Embodiment 3) Embodiment 3 is the image data corresponding to the spatial light modulation element being modulated beam sintering the powder to form a sintered layer, the sintered layer is laminated to form a three-dimensional model constituted by a powder sinter stack layer molding apparatus of the embodiment.

[叠层造型装置]本发明的实施方式的叠层造型装置如图35所示，具有在上方开口的容器156。 Embodiment [laminate molding apparatus] The laminate molding apparatus of the present invention is shown in FIG. 35, having an opening 156 at the top of the container. 容器156内，被2片分隔板151沿长度方向分成3份，在中央部配置有用于制作造型物的造型部153，在该造型部153的两侧配置有用于将造型中使用的粉末150向造型部153供给的供给部155。 The container 156, 151 by two partition plates into three parts in the longitudinal direction, is disposed at the central portion molding portion for making shaped object 153, at both sides of the molding portion 153 are used for powder molding 150 modeling unit 153 is supplied to the supply portion 155.

作为粉末150，可以使用工程塑料、金属、陶瓷、砂子、蜡等的粉末。 150 as a powder, the powder can be used engineering plastics, metals, ceramics, sand, wax or the like. 例如，可以使用丙烯酸、尼龙(Nylon)11的复合材料、加入小珠(Beads)的Nylon11、合成橡胶、不锈钢316、不锈钢420、硅砂、石英砂等的粉末。 For example, acrylic, nylon (Nylon) composite material 11, adding beads (Beads) of Nylon11, synthetic rubber, 316 stainless steel, 420 stainless steel, silica sand, quartz sand powder.

构成造型部153的底面的载物台152被支撑部154支撑，利用安装在支撑部154上的未图示的驱动机构可以升降。 Stage shape portion constituting the bottom surface 153 of the portion 154 of the support 152 is supported by a driving mechanism (not shown) mounted on the support portion 154 can lift. 另外，在容器156的内侧上部，安装有用于将容器156内的粉末150表面平坦化的反向旋转滚筒157，其可以沿副扫描方向往复移动。 Further, the inside of the upper container 156, 150 is attached to the surface of the powder for the inner container 156 of the reverse rotation roller flattening 157, which can reciprocally move along the sub-scanning direction. 当造型部153的载物台152下降时，由于造型部153的粉末150不足，因此利用反向旋转滚筒157从供给部155供给粉末150。 When modeling portion 153 152 decline stage, due to the shape of the Ministry of powder 150 less than 153, so the use of the reverse rotation of the drum 157 is supplied from the supply section 155 powder 150. 此外，通过将反向旋转滚筒157沿与移动方向相反方向旋转，所供给的粉末150在造型部153上被压开，从而将粉末150的表面平坦化。 Further, by the reverse rotation of the drum 157 rotate in opposite directions along the direction of movement, the supplied powder 150 is pressed in the shape of the opening portion 153, so that the surface of the powder 150 is planarized.

在收容在容器156内的粉末150的表面上方，箱状的扫描器162被使其长边方向朝向容器156的短边方向地配置。 In the top of the powder housed in a container surface 156 150, box-shaped scanner 162 so that the longitudinal direction of the short side direction toward the container 156 is disposed. 扫描器162被安装在短边方向的两个侧面上的2条支撑臂160支撑。 The scanner 162 is mounted on both sides of the short side of the two support arms 160 support. 而且，扫描器162与控制它的未图示的控制器连接。 Also, the scanner 162 connected to the control of its controller (not shown).

另外，在容器156的长边方向的两个侧面上，分别设有沿副扫描方向延伸的导引轨158。2条支撑臂160的下端部被可以沿着副扫描方向往复移动地安装在该导引轨158上。 Further, on both sides of the longitudinal direction of the container 156, are provided along the sub-scanning direction 158.2 extending guide rail portion 160 of the lower end of the support arm can be moved reciprocally mounted in the sub-scanning direction guide rail 158. 而且，在该叠层造型装置上，设有用于将扫描器162与支撑臂160一起沿导引轨158驱动的未图示的驱动装置。 Further, in the laminate molding apparatus provided with means for driving the scanner 162 together with the support arm 160 along the guide rail 158 (not shown) drives.

扫描器162如图36所示，具有排列成(例如3行5列)的近似矩阵状的多个(例如14个)曝光头166。 The scanner 162 shown in Figure 36, having arranged (e.g. 3 rows 5) approximate matrix form a plurality of (e.g., 14) exposing head 166. 该例中，由于与容器156的短边方向的宽度的关系，在第3行配置了4个曝光头166。 In this example, since the relationship between the width of the short side of the container 156 in line 3 is configured with four exposure heads 166. 而且，表示配置在第m行的第n列的各个曝光头的情况表记为曝光头166mn。 Moreover, indicates that the configuration in the case of each exposure head m-th row n-th column of the table in mind the exposure head 166mn.

曝光头166的曝光区域168为将副扫描方向作为短边的矩形。 Exposure head exposed regions 166 168 to the sub-scanning direction as the short side of the rectangle. 所以，伴随着载物台162的移动，在粉末152的表面就被每个曝光头166形成带状的曝光完成区域(烧结区域)170。 Therefore, along with moving the stage 162, the surface of the powder 152 is formed by each exposure head 166 of the strip-like exposure region is completed (sintering zone) 170. 而且，表示配置在第m行的第n列的各个曝光头的曝光区域时，表记为曝光区域168mn。 Further, when each represents the exposure head arranged in the m-th row in the exposure area n-th column of the table referred to as the exposure area 168mn.

曝光头16611～166mn各自的构成、动作及变形例与实施方式1相同。 16611 ~ 166mn each exposure head structure, operation and modification of the same embodiment. 但是，作为GaN类半导体激光器LD1～LD7，可以使用在350nm～450nm的波长范围中，具有所述的405nm以外的激发波长的激光器。 However, as the GaN-based semiconductor lasers LD1 ~ LD7, can be used in a wavelength range of 350nm ~ 450nm, 405nm with said laser other than the excitation wavelength. 波长350～450nm的激光由于光吸收率大、向烧结能的转换容易，因此可以高速地进行粉末的烧结，即造型。 350 ~ 450nm wavelength of the laser light absorption rate due to the large, sintering can be easily converted to, and therefore can be sintered powder at a high speed, i.e., shape. 激光的波长频域更优选350～420nm。 The wavelength of the laser in the frequency domain and more preferably 350 ~ 420nm. 从使用低成本的GaN类半导体激光器这一点考虑，特别优选波长405nm。 From the use of low-cost GaN-based semiconductor laser of this consideration, particularly preferably a wavelength of 405nm.

另外，在DMD50上，沿主扫描方向排列了800个微镜的微镜列被沿副扫描方向排列了600组，但是按照利用控制器仅驱动一部分的微镜列(例如800个×100列)的方式控制，在这一点上也与实施方式1相同。 In addition, the DMD50, along the main scanning direction 800 micromirrors arrayed micromirror columns are arranged in a group of 600 sub-scanning direction, but only a part of the drive by the controller in accordance with micromirror columns (such as 800 × 100 columns) way control, as with the first embodiment in this point.

所述的光造型装置中，与1层的曝光图案对应的图像数据被输入与DMD50连接的未图示的控制器，暂时储存在控制器内的帧存储器中。 In the stereolithography apparatus, and an exposure pattern layer corresponding to the image data input by the controller (not shown) connected to DMD50, temporarily stored in the frame memory controller. 该图像数据是将构成图像的各象素的浓度用2值(点的记录的有无)表示的数据。 (Point of presence or absence of record) data of the image data is represented by the concentration of each pixel constituting an image with binary.

扫描器162被未图示的驱动装置沿着导引轨158从副扫描方向的上游侧向下游侧以一定速度移动。 The scanner drive device 162 is not shown along the guide rail 158 from the upstream side to the downstream side of the sub-scanning direction at a constant speed. 当开始扫描器162的移动时，就会将储存在帧存储器中的图像数据每次多行地依次读出，基于被数据处理部读出的图像数据，对每个曝光头166生成控制信号。 When you start moving the scanner 162, the image data will be stored in the frame memory of each multi-line sequentially read out by the read data processing unit based on the image data, for each of the exposure head 166 generates a control signal. 此外，利用反射镜驱动控制部，基于所生成的控制信号，对每个曝光头166，对DMD50的微镜分别进行开关控制。 In addition, the use of a mirror drive control section, based on the control signal generated for each exposing head 166, respectively, of DMD50 micromirror switching control.

当从光纤阵列光源66向DMD50照射激光时，在DMD50的微镜为开状态时被反射的激光就会被透镜系统54、58在粉末150的表面(被曝光面)56上成像。 When the fiber array light source 66 to DMD50 irradiated with laser light, the laser microscope in DMD50 the open state will be reflected on the surface of the lens system 54, 58 (to be exposed face) powder 150 56 imaging. 这样，从光纤阵列光源66射出的激光对每个象素被开关，粉末150被与DMD50的使用象素数大约相同数目的象素单位(曝光区域168)曝光而烧结，即，溶解而固化。 Thus, emitted from the fiber array laser source 66 is switched for each pixel, the powder 150 is used with about the same number of pixels DMD50 number of pixel units (the exposure area 168) exposure sintering, i.e., dissolved and solidified. 另外，通过将扫描器162以一定速度移动，粉末150的表面就会被副扫描，被每个曝光头166形成带状的烧结区域170。 Further, by moving the scanner 162 at a constant speed, the surface of the powder will be 150 sub-scanning, each exposure head 166 is formed of a sintered strip area 170.

当利用扫描器162进行的1次的副扫描结束1层的烧结时，扫描器162就被未图示的驱动装置沿着导引轨158复原至位于最上游侧的原点。 When using the scanner 162 sub-scanning 1 end sintered layer 1, the scanner 162 drive is not shown to recover along the guide rail 158 located at the upstream side of the origin. 然后，当利用未图示的驱动马达使造型部153的载物台152下降特定量后，因载物台152的下降而不足的粉末150就被供给部155供给，粉末150的表面被反向旋转滚筒157平坦化。 Then, when the use of the driving motor (not shown) so that the shape of portion 153 of the stage 152 drops a specific amount, the result of decreased stage 152 and 150 was insufficient powder supply unit 155 is supplied, the surface of the powder 150 is reversed rotary drum 157 flat. 此外，当将下一层的图像数据输入与DMD50连接的未图示的控制器时，再次进行扫描器162的副扫描。 Further, when the controller next layer of the image data input and DMD50 connection (not shown), again the sub-scanning scanner 162. 像这样，通过反复进行副扫描的曝光(烧结)和载物台的下降，层叠烧结层，就可以形成3维模型。 Thus, by repeating the sub-scanning exposure (sintering) and the stage of decline, laminated sintered layers and form a three-dimensional model.

如上说明所示，本实施方式的叠层造型装置具有将沿主扫描方向排列了800个微镜的微镜列沿副扫描方向排列了600组的DMD，但是，由于按照利用控制器仅驱动一部分的微镜列的方式进行控制，因此与驱动全部的微镜列的情况相比，每1行的调制速度加快。 As described above, the present embodiment is a laminate molding apparatus having a main scanning direction 800 micromirrors arrayed micromirrors arranged in columns along the sub-scanning direction 600 groups DMD, however, since in accordance with the use of only part of the drive controller The mirror can be controlled in columns, as compared with the case of driving all of the micromirrors column, the modulation rate per one line faster. 这样就可以实现高速的曝光、造型。 This enables high-speed exposure modeling.

另外，由于在照明DMD的光源中，使用将合波激光光源的光纤的出射端部排列成阵列状的高亮度的光纤阵列光源，因此就为高输出，并且可以获得较深的焦点深度，并且可以获得高光密度输出，因此就可以高速并且高精度地进行造型。 Further, since the light source illuminating the DMD, the use of the combined waves exit end of the optical fiber laser light source arranged in an array-like optical fiber array light source of high brightness, and therefore a high output, and can obtain a deeper depth of focus, and You can obtain a high optical density output, and therefore high-speed and high accuracy modeling. 另外，由于各光纤光源的输出变大，为了获得所需的输出而必需的光纤光源数目就会减少，从而可以实现光造型装置的低成本化。 Further, since the output of each fiber source becomes large, the number of optical fibers in order to obtain a desired light output will be reduced while necessary, thereby enabling cost reduction of the optical modeling apparatus.

特别是，本实施方式中，由于使光纤的出射端的包层直径小于入射端的包层直径，因此发光部直径变得更小，从而可以实现光纤阵列光源的进一步的高亮度化。 In particular, in this embodiment, since the cladding diameter of the optical fiber exit end is smaller than the entrance end of the cladding diameter, the diameter of the light-emitting portion becomes smaller, thereby enabling the fiber array light source further higher brightness. 这样就可以实现更加高精细的造型。 This can be achieved more high-precision modeling.

而且，与实施方式2相同，既可以用被脉冲驱动的激光进行曝光，也可以将同一烧结层分成多次进行曝光。 Further, the same as in Embodiment 2, can be either pulse-driven laser exposure, but also the same sintered layer may be divided into multiple exposure.

(实施方式4)实施方式4是使用实施方式1的曝光装置制造形成了微小流路的合成反应用微芯片的实施方式。 (Embodiment 4) Embodiment 4 is an embodiment using an exposure apparatus for manufacturing a synthesis reaction forming the minute flow passage of a microchip with an embodiment.

[合成反应用微芯片]合成反应用微芯片如图37所示，在用玻璃等制成的平板状的基板150上，重合保护基板202而构成。 [Synthesis of reaction microchip] synthetic reaction as shown in FIG. 37 with microchips, glass, or the like on a plate-shaped substrate 150, the protective substrate 202 is constituted overlap. 基板150的厚度通常为0.5mm～2.0mm左右，保护基板202的厚度通常为0.1mm～2.0mm左右。 The thickness of the substrate 150 is usually about 0.5mm ~ 2.0mm, thickness of the protective substrate 202 is generally about 0.1mm ~ 2.0mm. 在保护基板202上，分别按照贯穿保护基板202的方式设有用于注入试剂的注入口204a、204b、将试剂反应而得的反应液排出的排出口206。 On the protective substrate 202, respectively, according to the way through the protective substrate 202 is provided for injecting reagent injection inlet 204a, 204b, the discharge port of the reagent obtained by the reaction liquid discharge 206. 在基板150上，还设有用于试剂或反应液流通的微小流路208。 On the substrate 150, also has a small passage for reagents or reaction liquid flow 208. 微小流路208被按照在分别从注入口204a、204b注入的试剂在合流点210合流后，向排出口206排出的方式配设。 Minute flow path 208 is in accordance with the respective inlet 204a from the injection, 204b injection of reagent rejoined at the confluence point 210, the discharge of the discharge port 206 is disposed way. 微小流路的槽宽度为数十～数百μm特别优选10μm～50μm。 The groove width of the minute flow path of several tens to several hundreds of μm and particularly preferably 10μm ~ 50μm. 槽宽度为10μm～50μm的微小流路的流路阻力比较小，可以获得良好的尺寸效应。 The groove width is 10μm ~ 50μm small flow path resistance of the flow path is relatively small, good dimensional effect can be obtained.

当向该反应用微芯片的注入口204a、204b中分别注入试剂，从排出口206侧抽吸时，试剂流过微小流路208在合流点210被混合而反应。 When this reaction with a microchip injection port 204a, 204b, respectively inject reagents, when the suction from the discharge port 206 side, reagent flow through the minute flow path 208 at the confluence point 210 is mixed reactions. 这样就可以合成所需的物质。 This allows the synthesis of the desired material. 所得的反应液流过微小流路208而从排出口206排出。 The resultant reaction solution through a minute flow passage 208 is discharged from the discharge port 206. 利用从该排出口206所得的反应液的分析，可以与通常规模的反应相同地，进行反应生成物的识别或定量。 From the analysis of the use of the discharge port 206 of the resulting reaction solution, the reaction may be generally the same size, the identification of the reaction product or quantitative.

[微芯片的制造方法]下面，参照图38对所述合成反应用微芯片的制造方法进行说明。 [Microchip manufacturing method] Next, with reference to FIG. 38 pairs of the synthetic reaction using the microchip manufacturing method will be described. 该制造方法由将光致抗蚀膜曝光的工序、将光致抗蚀膜部分地除去而图案化的图案化工序、蚀刻基板而形成微小流路的蚀刻工序、将形成了微小流路的基板和保护基板接合的工序构成。 This manufacturing method by the photoresist film exposing step, the photoresist film is partially patterned and patterned step of etching the substrate to form a micro-flow channel etching step is removed, the substrate with tiny passage substrate bonding process and the protection of the constitution. 下面对各工序进行说明。 Each step will be explained below.

如图38(A)所示，在基板150上利用旋转涂覆法形成了光致抗蚀膜212后，如图38(B)所示，按照微小流路208的图案将光致抗蚀膜212曝光，如图38(C)所示，使曝光部分214溶解在显影液中而除去。 FIG. 38 (A), on the substrate 150 by spin coating method after forming a photoresist film 212, as shown in Figure 38 (B), the micro flow path 208 in accordance with the pattern of the photoresist film exposure 212, as shown in FIG. 38 (C), the exposed portion 214 was dissolved in the developing solution is removed. 这里，通过以较高的位置精度对光致抗蚀膜212进行图案处理，就可以高精度地形成微小流路208。 Here, a high positional accuracy by the photoresist film 212 is patterned processing, can be formed with high accuracy the minute flow path 208. 而且，对于光致抗蚀膜212的曝光工序将在后面叙述。 Further, the photoresist film 212 for the exposure step will be described later.

此外，如图38(D)所示，使用被图案处理了的光致抗蚀膜212，将基板150从表面上蚀刻掉而形成微小流路208，如图38(E)所示，将剩余的光致抗蚀膜212除去。 In addition, FIG. 38 (D), the pattern being processed using the photoresist film 212, the substrate 150 is etched away from the surface of the fine flow path 208 is formed, as shown in Figure 38 (E), the remaining The photoresist film 212 is removed. 基板150的蚀刻虽然可以用干式蚀刻法及湿式蚀刻法的任意一种来进行，但是由于是微细加工，因此优选高速原子射线(FAB)蚀刻等干式蚀刻法。 Although the etched substrate 150 may be any of a dry etching method and a wet etching method to carry out, but since micromachining is preferable because high-speed atomic rays (FAB) etching, a dry etching method.

然后，如图38(F)所示，利用超声波加工等在保护基板202上形成成为注入口204a、204b、排出口206的贯穿孔。 Then, as shown in Figure 38 (F), the use of an ultrasonic machining, etc. is formed on the protective substrate 202 become inlet 204a, 204b, the discharge port 206 of the through-hole. 此外，如图38(G)所示，按照使保护基板202、基板150的形成了微小流路208的面相面对的方式将量基板重合、密接而固定。 In addition, FIG. 38 (G) as shown, in accordance with the protective substrate 202, the substrate 150 is formed a micro flow path 208 in the face surface of the substrate manner that the amount of overlap, the adhesion and fixation. 例如，可以在固定中使用UV粘结剂。 For example, UV adhesive in the fixation. 在将UV粘结剂利用旋转涂覆法等涂布在保护基板202的形成了微小流路208的面上，将基板150和保护基板202密接后，照射紫外线而粘接。 UV adhesive in the spin coating method or the like by a coating to protect the surface of the substrate to form a 202 minute flow paths 208, 150 and the substrate 202 after the protective substrate adhesion, UV irradiation and bonding.

而且，在用玻璃形成基板150和保护基板202的情况下，也可以用氢氟酸将两基板的表面溶解而接合。 Further, in the case of using a glass substrate 150 and forming protective substrate 202 to be surface with hydrofluoric acid dissolved the two substrates bonded.

[光致抗蚀膜的曝光]下面，对光致抗蚀膜的曝光工序进行详细说明。 [Photoresist exposure] Next, the photoresist film exposure step described in detail. 该曝光工序中，使用空间光调制元件，对波长350nm～450nm的激光与微小流路的形成图案对应地进行调制，用调制后的激光将光致抗蚀膜212数字曝光。 The exposure step, using spatial light modulation element, for a laser wavelength of 350nm ~ 450nm and the minute flow path pattern is formed corresponding to the modulated laser light modulated with the photoresist film 212 digital exposure. 为了用更高精度进行曝光，最好用从高亮度光源中射出的较深的焦点深度的激光进行曝光。 In order to use more accurate exposure, preferably with deep depth of focus of the laser light emitted from the high brightness light source for exposure.

在光致抗蚀膜212中，可以使用印刷配线基板(PWB；Printed WiringBoard)的制造工序中使用的干式·薄膜·抗蚀层(DFR；Dry Film Resist)或电镀抗蚀层。 Dry · · resist film used in the manufacturing process (DFR; Dry Film Resist); in the photoresist film 212, you can use a printed wiring board (Printed WiringBoard PWB) or plating resist. 这些DFR或电镀抗蚀层与在半导体制造程序中使用的抗蚀层相比，可以实现厚膜化，可以形成厚度10μm～40μm的膜。 These DFR or plating resist layer as compared with the resist layer used in the semiconductor manufacturing process, it is possible to achieve thick film, a film thickness of 10μm ~ 40μm can be formed.

另外，通过层叠多层光致抗蚀膜，可以实现进一步的厚膜化。 Further, by laminating the multilayer photoresist film, thick film can achieve further. 此时，如图39(A)所示，在形成第1光致抗蚀膜212a，对特定区域214a曝光后，如图39(B)所示，在第1光致抗蚀膜212a上形成第2光致抗蚀膜212b，使用数字曝光的定标(scaling)功能将与特定区域214a对应的区域214b曝光。 At this time, as shown in Figure 39 (A), in the formation of the first photoresist film 212a, 214a exposed on a specific area, as shown in Figure 39 (B), on the first photoresist film 212a is formed the second photoresist film 212b, a digital exposure using scaling (scaling) feature a specific region 214a corresponding to the exposure region 214b. 如图39(C)所示，当将被曝光的区域214a及区域214b除去时，形成抗蚀层的深槽。 In FIG. 39 (C), when the area 214a and 214b of the area to be exposed is removed to form a deep trench resist layer. 而且，该例中，虽然对层叠2层抗蚀膜的例子进行了说明，但是，可以通过重叠3层、4层抗蚀膜，利用数字曝光的定标功能对相同位置曝光，形成更深的槽。 Further, this embodiment, although the example laminated layer resist film 2 has been described, but, by superimposed layers 3, 4 layer resist film, digital exposure function for scaling the same position of the exposure, the formation of deeper grooves . 而且，这里，虽然采用了使曝光不通过显影工序，层叠至2层以上的说明，但是也可以按照将第1层曝光，其后显影，利用数字定标对显影后的基板的伸长或抗蚀层的膨胀等进行修正，将第2层曝光的方式，在显影后曝光，对第3层、第4层也同样地进行曝光。 Moreover, here, although the use of the exposure not through the development step, two or more layers laminated to the description, it is also possible in accordance with the first layer is exposed, followed by development, digital scaling or anti elongate substrate after development of expansion of the etch stop layer and the like is corrected, the Layer 2 exposure mode, exposure after development of Layer 3, Layer 4 similarly exposed. 这样就可以高精度地修正显影时的图案的位置偏移。 This can be precisely correct position when shifted development pattern.

另外，通过像这样将光致抗蚀膜212厚膜化，就可以形成抗蚀层的深槽，从而可以利用蚀刻在基板202上精度优良地形成深槽(微小流路)。 Further, like the photoresist film 212 made thick, deep grooves can be formed in the resist layer, by etching thereby forming a deep trench in the substrate 202 (fine flow path) accuracy excellently. 例如，从图40(A)及(B)中可以看到，当用FAB蚀刻形成相同槽宽的微小流路时，虽然当光致抗蚀膜212较薄时，利用倾斜光容易对基板150进行侧面蚀刻，但是，当光致抗蚀膜212较厚时，由于被散射，倾斜光难以入射，从而难以对基板150进行侧面蚀刻。 For example, from FIG. 40 (A) and (B) can be seen, when the same width formed FAB etching tiny passage, although when the photoresist film 212 is thin, easy-to-use substrate 150 inclined light side etching carried out, however, when the photoresist film 212 is thick, since the scattered, difficult to inclined incident light, making it difficult to etch the substrate 150 side. 这样，就可以在基板150上精度优良地形成深槽。 Thus, it can be formed in a deep groove 150 on excellent precision substrates. 另外，由于容易进行干式蚀刻，因此可以使用位置及图案宽度等对第2层、第3层的图案进行数字修正。 Further, since the dry etching easily, so you can use the position and pattern width of Layer 2, Layer 3, a pattern digitally corrected.

在形成槽宽度10μm～50μm的微小流路的情况下，光致抗蚀膜212的厚度优选10μm～50μm，更优选10μm～100μm。 In the case of forming the groove width of 10μm ~ 50μm of the minute flow path, the thickness of the photo resist film 212 is preferably 10μm ~ 50μm, more preferably 10μm ~ 100μm.

另外，在用使用了蚀刻溶液的湿式蚀刻形成微小流路的情况下，也可以如图41所示，在光致抗蚀膜212上图案形成成螺面状展开的开口216。 Further, in the case where the etching solution used for forming the minute flow paths wet etching to be shown in Figure 41, the photoresist film 212 is formed into a spiral planar pattern of the opening 216 to expand. 由于开口216成螺面状展开，因此就容易使蚀刻溶液浸入。 Since the opening 216 into a spiral planar expansion, so it is easy to make the etching solution immersion.

[微小流路的形成]与曝光图案对应的图像数据被输入与DMD50连接的未图示的控制器，被暂时储存在控制器内的帧存储器中。 [Micro flow path is formed] and exposure pattern corresponding to the image data input by the controller (not shown) connected to DMD50, and is temporarily stored in the frame memory controller. 该图像数据是用2值(点的记录的有无)表示构成图像的各象素的浓度的数据。 The image data is binary (presence or absence of dot recording) represents each pixel constituting the image data of the concentration.

将形成了光致抗蚀膜的基板150吸附在表面的载物台152被未图示的驱动装置，沿着导引轨158从门160的上游侧向下游侧以一定速度移动。 A drive means formed photoresist film 150 adsorbed on the surface of the substrate stage 152 is not shown, along the guide rail 158 from the upstream side to the downstream side of the gate 160 at a constant speed. 当载物台152通过门160下时，当利用安装在门160上的检测传感器164检测到基板150的前端后，就会将储存在帧存储器中的图像数据每次多行地依次读出，基于被数据处理部读出的图像数据，对每个曝光头166生成控制信号。 After detecting sensor when the next stage 152 through gate 160, when use is mounted on the door to the front end 160 of the 164 board 150 is detected, the image data will be stored in the frame memory of each multi-line sequentially read out, image data read out by the data processing unit based on each exposure head 166 generates a control signal. 此外，利用反射镜驱动控制部，基于所生成的控制信号，对每个曝光头166，对DMD50的微镜分别进行开关控制。 In addition, the use of a mirror drive control section, based on the control signal generated for each exposing head 166, respectively, of DMD50 micromirror switching control. 即，在DMD50上沿主扫描方向排列了800个微镜的微镜列被沿副扫描方向排列了600组，对其全部进行使用。 That is, in the DMD50 arranged along the main scanning direction of the micromirrors 800 micromirrors 600 columns are arranged in the sub-scanning direction group, its all for use.

当从光纤阵列光源66向DMD50照射激光时，在DMD50的微镜为开状态时被反射的激光就会被透镜系统54、58在形成于基板150上的光致抗蚀膜的被曝光面56上成像。 When the fiber array light source 66 to DMD50 irradiated with laser light, the laser microscope in DMD50 the open state will be reflected in the lens system 54, 58 formed on the substrate 150 of the photoresist film is exposed surface 56 imaging. 这样，从光纤阵列光源66射出的激光对每个象素被开关，光致抗蚀膜被与DMD50的使用象素数大约相同数目的象素单位(曝光区域168)曝光。 Thus, the light source 66 is emitted from the fiber array laser is switched for each pixel, the photoresist film is used and the number of pixels DMD50 approximately the same number of pixels in the unit (exposure area 168) exposed. 另外，通过将基板150与载物台152一起以一定速度移动，形成于基板150上的光致抗蚀膜就会被扫描器162沿与载物台移动方向相反的方向进行副扫描，被每个曝光头166形成带状的曝光完成区域170。 Further, the substrate 150 together with the stage 152 at a constant speed of the mobile, the scanner 162 will be formed in the photoresist film along the loading direction opposite to the mobile station 150 the sub-scanning direction on the substrate, are each exposing an exposure head 166 to complete the formation of banded region 170.

当利用扫描器162进行的光致抗蚀膜的副扫描结束，用检测传感器164检测到基板150的后端时，载物台152就被未图示的驱动装置沿着导引轨158复原至位于门160的最上游侧的原点，再次沿着导引轨158从门160的上游侧开始向下游侧以一定速度移动。 When the photoresist film is the sub scanning using the scanner 162 is completed, the rear end of the substrate 150 is detected by the detection sensor 164, the stage driving apparatus 152 will be along the guide rail (not shown) to recover 158 the origin of the most upstream side of the door 160, once again began to move at a constant speed on the downstream side from the upstream side of the door 160 along the guide rail 158.

如上说明所示，本实施方式中，在光致抗蚀膜的曝光工序中，由于使用DMD等空间光调制元件，因此可以与微小流路的形成图案对应地将激光对每个象素调制，从而可以用调制后的激光将光致抗蚀膜高速并且高精细地曝光。 As described above, the present embodiment, the photoresist film exposure process, and so the use of DMD spatial light modulation element, it is possible with the micro flow path is patterned to correspond to each pixel of the laser modulation, so that the laser can be modulated with the photoresist film is exposed to high-speed and high precision. 像这样，由于在曝光工序中，可以实现任意图案的光致抗蚀膜的高速并且高精细的曝光，因此经过其后的图案化工序及蚀刻工序，就可以高速并且高精度地形成任意的图案的微小流路。 As described above, since the exposure step, a photoresist film can achieve high-speed and high-definition any pattern exposure, so after the subsequent step of patterning and etching step, it can be formed of any high-speed and high precision pattern The minute flow paths.

如上所述，由于可以实现以任意的图案的曝光，因此就可以容易地形成复杂的图案的微小流路。 As described above, since it is possible to achieve an arbitrary pattern exposure, and therefore it is possible to easily form minute patterns of complex flow paths. 另外，由于可以实现高速曝光，因此就可以在大面积的玻璃基板上在短时间内形成微小流路。 Further, since it is possible to achieve high-speed exposure, and therefore may be a large area on a glass substrate forming the minute flow paths in a short time. 另外，由于为数字曝光，因此不需要每个图案的掩模，从而可以低成本地形成微小流路。 Further, since the digital exposure, it is not necessary for each mask pattern, thereby forming a fine flow path at low cost.

另外，由于在光致抗蚀膜中，使用DFR或电镀抗蚀层，因此与半导体制造程序中使用的抗蚀层相比，可以实现厚膜化，可以形成厚度10μm～40μm的光致抗蚀膜。 Further, since the photoresist film using the plating resist layer or DFR, as compared with the resist layer used in the semiconductor manufacturing process, the thick film can be achieved, can be formed to a thickness 10μm ~ 40μm of photoresist film. 由于像这样，将光致抗蚀膜厚膜化，因此就可以利用蚀刻精度优良地形成深槽的微小流路。 Since like this, the photoresist film is made thick, and therefore excellent accuracy can be formed by etching the minute flow paths deep grooves.

另外，可以将光致抗蚀膜层叠多层，进一步地实现厚膜化。 Further, the photoresist film may be a multilayer laminate, and further to achieve thick film. 此时，可以使用数字曝光的定标功能，将被层叠多层的光致抗蚀膜的相同位置曝光。 At this time, you can use the calibration function digital exposure, the same location will be exposed photoresist film laminated multilayer.

另外，本实施方式中，在曝光装置中，由于使用合波激光光源构成光纤阵列光源，并且使光纤的出射端的包层直径小于入射端的包层直径，因此发光部直径被进一步缩小，从而可以实现光纤阵列光源的高亮度化。 In the present embodiment, in the exposure apparatus, since a multiplexed laser light source constituting the optical fiber array light source, and the cladding diameter of the exit end of the optical fiber is smaller than the cladding diameter of the entrance end of the light-emitting portion diameter is further reduced, thereby enabling fiber array of high brightness light source. 这样，就可以用较深焦点深度的激光将光致抗蚀膜进一步高精细地曝光。 Thus, it can be a photoresist film exposing further high precision laser with deep depth of focus. 例如，可以实现以束径1μm以下、析像度0.1μm以下的超高析像度的曝光，足够精度优良地形成槽宽度10μm～50μm的微小流路。 For example, you can achieve a beam diameter 1μm or less, exposure resolution 0.1μm or less of an ultra-high resolution, sufficient accuracy to form a groove width of 10μm ~ 50μm micro flow path excellently.

[高速驱动方法]虽然通常在DMD上，沿主扫描方向排列了800个微镜的微镜列沿副扫描方向被排列为600组，但是也可以按照利用控制器仅驱动一部分的微镜列(例如800个×10列)的方式来控制。 [High-speed driving method] While it is generally on the DMD, along the main scanning direction 800 micromirrors arrayed micromirror columns are arranged in the sub-scanning direction is 600 group, but can also be driven only by the controller in accordance with a portion of the mirror columns ( For example 800 × 10 columns) way to control. 由于在DMD的数据处理速度上有限制，与所使用的象素数成比例地决定每1行的调制速度，因此通过仅使用一部分的微镜列，每1行的调制速度就会加快。 Due to limitations in the data processing speed of the DMD, and the number of pixels used in proportion to the modulation rate per one line decision, so by using only a portion of the mirror column, the modulation rate per one line will accelerate. 这样就可以缩短曝光时间。 This can shorten the exposure time. 另一方面，在连续地使照射头相对于曝光面进行相对移动的扫描方式的情况下，不需要全部使用副扫描方向的象素。 On the other hand, when the irradiation is continuously exposed surface of the head with respect to the relative movement of the scanning method, it is unnecessary to use all of the pixels in the sub-scanning direction.

[微芯片的其他的制造方法]所述的实施方式中，虽然对在构成微芯片的基板上直接形成微小流路的例子进行了说明，但是也可以在型模制作用的基板上形成微小流路而制作型模，利用使用该型模的冲模或玻璃模具，制造具有微小流路的微芯片。 Embodiment [other manufacturing method of the microchip] said, although on a substrate made of an example of a microchip directly to the formation of tiny flow path has been described, but may be formed on the mold making small stream with the substrate way to prepare a mold by using the glass mold or die of a die, producing a microchip having a micro flow path.

[具有微小流路的微芯片]所述的实施方式中，虽然对制造合成反应用的微芯片的例子进行了说明，但是本发明的微小流路的形成方法也可以适用于具有微小流路的其他种类的微芯片的情况。 Embodiment [microchip having a micro flow passage] above, although for the manufacture of synthetic reaction has been described using the example of the microchip, but the method for forming the minute flow passage of the present invention may also be applicable to a small flow path of other types of the microchip.

作为其他种类的微芯片，可以举出癌诊断芯片、细胞生化学芯片、环境检测用芯片、色谱芯片、电泳芯片、蛋白质芯片、免疫分析芯片等。 As other types of microchips, chip include cancer diagnosis, cell biochemistry chip, environmental testing chip, chip chromatography, electrophoresis chips, protein chips, chips immunoassay. 这些芯片虽然根据各芯片的功能，微小流路的形成图案不同，但是，由于根据本发明的微小流路的形成方法，可以利用与微小流路的形成图案对应的数字曝光形成蚀刻掩模，因此容易与多种生产对应。 Although these chips based on the function of each chip, minute flow paths are formed in different pattern, however, since according to the method for forming the minute flow passage of the present invention may be utilized with the micro flow path is formed corresponding to the digital exposure pattern forming an etching mask, thus easily correspond with a variety of production. 另外，也容易形成具有多个功能的微小流路。 In addition, it is easy to form minute flow path having a plurality of functions. 特别是，利用本方法可以通过形成大面积的图案、提高材料利用率和提高收益，来获得低成本的微小流路形成方法。 In particular, the use of the present method may be formed by patterning a large area, improve material utilization and increase revenue, to obtain a low-cost method for forming the minute flow passage.

另外，本发明的微小流路的形成方法并不限定于实验室芯片的微小流路，可以作为在基板上形成微细的槽的方法广泛使用。 Further, the method for forming the minute flow passage of the present invention is not limited to the minute flow path lab on a chip can be used as a method for forming fine grooves on a substrate is widely used.

(实施方式5)实施方式5是与实施方式1的曝光装置相同地使用了高输出并且高亮度的光纤阵列光源的漂白处理装置的实施方式。 (Embodiment 5) Embodiment 5 is an embodiment of an exposure apparatus using the same manner as the embodiment of high-output and high brightness bleached processing apparatus of an optical fiber array light source.

[漂白处理装置的构成]本发明的实施方式的漂白处理装置如图42所示，具有将长方形的布200沿着特定的传输路径传输的多个传输滚筒202。 Bleaching apparatus embodiment [bleach processing apparatus configured] of the present invention is shown in Figure 42, it has a plurality of rectangular cloth 200 along a transmission path for transmitting the specific transport rollers 202. 另外，漂白处理装置具有贮存了含有氧化剂或还原剂的药液204的药液槽206，在该药液槽206的传输方向下游侧设有激光照射部208。 Further, the bleach processing apparatus having a liquid storage tank containing liquid oxidant or reductant 204 206, in drug transport direction downstream side tank 206 is provided with a laser irradiation portion 208. 该激光照射部208中，如图43所示，将激光向布200脉冲照射的照射头500被配置于位于传输路径上的布200的上方。 The laser irradiation unit 208, shown in Figure 43, the laser pulse irradiation to the irradiation cloth 200 is disposed above the head 500 is located on the transmission path 200 of the cloth.

照射头500如图44(A)及(B)所示，由将多个(例如1000条)光纤30沿着与副扫描方向正交的方向排列成1列的光纤阵列光源506、将从光纤阵列光源506射出的激光仅向与光纤30的出射端的排列方向正交的方向聚光而在布200的表面(扫描面)56上成像的圆柱透镜510构成。 Irradiation head 500 in FIG. 44 (A) and (B), by a plurality of (e.g., 1000) and an optical fiber 30 along the sub-scanning direction are arranged in a direction perpendicular to a fiber array light source 506, and from the optical fiber emitted laser light source array 506 and only the arrangement direction of the exit end of the optical fiber 30 in a direction perpendicular to the condensing surface (scanning surface) 200 of the cloth 56 on the cylindrical lens 510 constituting the imaging. 而且，图44中，对于结合了光纤30的入射端的光纤阵列光源506的模块部分，将图示省略。 Further, in FIG. 44, for binding the entrance end of an optical fiber 30 fiber array light source module section 506, the illustration is omitted.

圆柱透镜510形成沿特定方向具有曲率并且沿与特定方向正交的方向较长的形状，长边方向(与特定方向正交的方向)被按照与光纤30的出射端的排列方向平行的方式配置。 Cylindrical lens 510 is formed in a specific direction and has a curvature along a direction orthogonal to the specific direction of elongated shape, the longitudinal direction (the direction orthogonal to the specific direction) is in accordance with the fiber arrangement direction of the exit end 30 of the parallel configuration. 而且，也可以使用具有如下功能的如下的光量分布修正光学系统，即，相对于圆柱透镜510，以及flyeyelens系统的均一化照明光学系统或激光器出射端的排列方向，与透镜的光轴接近的部分拓宽光束，并且远离光轴的部分缩窄光束，而且相对于与该排列方向正交的方向使光仍保持原状地通过。 Further, also possible to use the amount of light below have the following functions distribution correcting optical system, i.e., with respect to the arrangement direction uniform illumination optical system or a laser cylindrical lens 510, and flyeyelens system exit end of the optical axis closer to the portion of the lens to broaden beam, and the beam from the optical axis of the narrowed portion, and with respect to a direction orthogonal to the array direction of the light to remain undisturbed by.

光纤阵列光源506如图29所示，具有多个激光器模块64，在各激光器模块64上，结合有多模式光纤30的一端。 Fiber array light source 506 shown in Figure 29, having a plurality of laser modules 64, 64 in each of the laser modules, combined multiple-mode optical fiber 30 at one end. 而且，各激光器模块64的构成、动作及变形例与实施方式1相同。 Also, each laser module same configuration, operation and modification of the embodiment 64 of 1. 在各激光器模块64中，激光束B1～B7的与多模式光纤30的结合效率为0.85，在GaN类半导体激光器LD1～LD7的各输出为30mW的情况下，对于排列成阵列状的各条光纤31，在连续动作中可以获得输出180mW(＝30mW×0.85×7)的合波激光束B。 In the laser module 64, the laser beam and multi-mode optical fiber coupling efficiency B1 ~ B7 0.85 30, each GaN-based semiconductor lasers LD1 ~ LD7 output of 30mW for the case where, for each arranged in an array-like optical fiber 31, you can obtain an output 180mW in continuous operation (= 30mW × 0.85 × 7) of co-wave laser beam B.

另外，所述的合波激光光源中，对各个GaN类半导体激光器LD1～LD7进行脉冲驱动，可以获得特定的脉冲宽度的激光。 Further, the synthetic wave laser light source, each GaN-based semiconductor lasers LD1 ~ LD7 driving pulse, to obtain a specific pulse width laser. 通过脉冲照射激光，可以抑制发热，从而防止由热造成的纤维的损伤(对布的损伤)。 By laser pulse irradiation, heat generation can be suppressed, thereby preventing the fiber caused by the heat damage (damage of cloth).

各脉冲的峰值功率优选300mW～3W。 The peak power of each pulse is preferably 300mW ~ 3W. 在峰值功率为300mW的情况下，优选脉冲宽度为10nsec(纳秒)～10μsec(微秒)，每1秒的脉冲数优选104～107。 At a peak power of 300mW, it is preferable pulse width 10nsec (ns) ~ 10μsec (microseconds), for every one second the number of pulses is preferably 104 to 107. 此时的效率约为10％。 In this case the efficiency is about 10%. 另外，在峰值功率为3W的情况下，优选脉冲宽度为1nsec～1μsec，每1秒的脉冲数优选104～107。 Further, in the case where the peak power of 3W, preferably a pulse width 1nsec ~ 1μsec, every one second the number of pulses of preferably 104 to 107. 此时的效率约为1.0％。 At this point the efficiency was about 1.0%.

而且，GaN类半导体激光器很难产生如前所述的被称为COD(Catastrophic Optical Damage)的光出射端面的破损，可靠性高，可以实现高峰值功率。 Further, GaN-based semiconductor laser damage hardly occurs is called COD (Catastrophic Optical Damage) light exit end face as described above, high reliability, high peak power can be realized.

[漂白处理装置的动作]下面，对所述的漂白处理装置的动作进行说明。 [Action bleach processing apparatus] Next, operation of the bleaching processing apparatus will be described.

当将经过了除去附着在纤维上的油分等杂质的精练工序、除去糊剂的去糊工序的染色前的布200向所述漂白处理装置供给时，布200随着传输滚筒202的旋转而向箭头A方向传输，被浸渍在药液槽206内的药液204中。 When after removal of oil adhering to the fibers of the scouring step of grading the impurities, removing apparatus 200 supplying paste to the paste dyeing step prior to the bleaching process is cloth, the cloth 200 with rotation of the transfer cylinder 202 and the transmission direction of arrow A, is immersed in the liquid in the groove 206 of the liquid 204. 浸渍时间优选0.1～1小时。 The immersion time is preferably from 0.1 to 1 hour.

药液204以特定浓度包含有氧化剂或还原剂。 Liquid 204 containing a specific concentration oxidizing or reducing agent. 作为氧化剂，可以使用过氧化氢(H2O2)、过硼酸钠(NaBO3·4H2O)、高锰酸钾(KMnO4)等过氧化物、或漂白粉(CaCl·ClO)、次氯酸钠(NaClO)、亚氯酸钠(NaClO2)等氯化合物等。 As the oxidizing agent, hydrogen peroxide (H2O2), sodium perborate (NaBO3 · 4H2O), potassium permanganate (KMnO4) peroxide, or bleach (CaCl · ClO), sodium hypochlorite (NaClO), sodium chlorite (NaClO2) and other chlorine compounds. 另外，作为还原剂，可以使用连二亚硫酸盐(Na2S2O4)、四氢硼酸钠(NABH4)等。 Further, as a reducing agent can be used dithionite (Na2S2O4), sodium tetrahydroborate (NABH4) and the like. 其中，从抑制纤维的损伤的观点考虑，特别优选氧化环氧作用弱的四氢硼酸钠。 Wherein, inhibition of fiber damage from the viewpoint of effect of ethylene oxide is particularly preferred weak sodium tetrahydroborate.

作为溶剂，可以使用水或甲醇、乙醇等低级醇。 As the solvent, water or methanol, a lower alcohol such as ethanol. 氧化剂或还原剂的浓度优选1％～10％。 The concentration of the oxidizing agent or a reducing agent preferably from 1% to 10%. 另外，也可以在药液204中，适当添加用于活化氧化剂、还原剂的活化助剂。 Further, in the liquid 204 may be appropriately added for activating the oxidant, a reducing agent activating additives.

然后，从药液槽206中取出的布200在浸渍了药液204的状态下被向激光照射部208供给。 Then removed from the liquid tank 206 cloth 200 is supplied to the laser irradiation unit 208 is immersed in the liquid state 204. 在激光照射部208中，从照射头500的光纤阵列光源506中射出的激光被圆柱透镜510仅向与光纤30的出射端的排列方向正交的方向聚光，在布200的表面56上以线状成像。 In the laser irradiation unit 208, is emitted from the fiber array light source 506 of the laser irradiation head 500 is only the cylindrical lens 510 and the arrangement direction of the exit end of the optical fiber 30 in the direction orthogonal to the condenser, on the surface of the cloth 200 to the line 56 like imaging. 该圆柱透镜510例如作为以沿短轴方向3倍、沿长轴方向1倍的倍率放大束径的放大光学系统发挥作用。 The cylindrical lens 510, for example, as to three times the short axis direction, along a longitudinal direction enlarged magnification of the beam diameter enlargement optical system play a role. 另外，布200被以一定速度传输，利用来自照射头500的线光束，沿与传输方向相反的方向被副扫描。 In addition, the cloth 200 is transmitted at a constant speed, the use of the line beam from the irradiation head 500, opposite to the direction of transmission is a sub-scanning direction.

通过像这样向浸渍了药液204的布照射激光，附着在纤维上的着色成分及药液204中的氧化剂或还原剂被活化，两者的反应性提高，从而可以获得良好的漂白效果。 By thus irradiating the laser to a cloth impregnated with the liquid 204, attached to the fiber colored liquid composition and the oxidizing or reducing agent 204 is activated, both the reactivity increase, which can obtain good bleaching effect. 为了防止由热造成的纤维的损伤而获得活性效果，所照射的激光的波长优选350nm～450nm，更优选400nm～415nm。 In order to prevent thermal damage to the fibers due to the effect of activity is obtained, the wavelength of the irradiated laser is preferably 350nm ~ 450nm, more preferably 400nm ~ 415nm. 另一方面，在氧化剂或还原剂的反应性较高的情况下，优选对光学系统的负荷较少、容易实现半导体激光器的高输出化的400nm以上的波长。 On the other hand, in the case of highly reactive oxidizing agent or a reducing agent, preferably less load on the optical system, easy to achieve high output semiconductor laser of a wavelength of 400nm or more.

这里，算出布200的表面上的光密度。 Here, the optical density is calculated on the surface of the cloth 200. 在照射头的合波激光光源中，在GaN类半导体激光器LD1～LD7的各输出为30mW的情况下，对于排列成阵列状的各条光纤30，可以获得输出180mW(＝30mW×0.85×7)的合波激光束B。 Irradiation head multiplexed laser light source, the output of each GaN-based semiconductor lasers LD1 ~ LD7 is the case 30mW, arranged in an array shape for each optical fiber 30, can obtain an output 180mW (= 30mW × 0.85 × 7) The combined wave laser beam B. 所以，对于将1000条多模式光纤30排列成1列的光学阵列光源的情况，激光射出部68处的连续动作中的输出约为180mW。 So, for the continuous operation when the optical array of light sources over 1000 optical fiber 30 are arranged in a pattern, the laser emitting section 68 of the output of about 180mW.

在光纤阵列光源506的激光射出部68中，如上所述，高亮度的发光点被沿着主扫描方向排列成一列。 In the fiber array laser light source emitting portion 68 506, as described above, high-brightness light-emitting points are arranged in a main scanning direction. 由于将来自单一的半导体激光器的激光与1条光纤结合的以往的光纤光源为低输出，因此必须排列多列才能获得所需的输出，但是，本实施方式中使用的合波激光光源由于为高输出，因此即使排列少数列，例如1列，也可以获得所需的输出。 Because from a single semiconductor laser and an optical fiber laser combined with a conventional fiber optic light source for the low output, and therefore must be arranged in a plurality of rows to get the desired output, however, co-wave laser light source used in the present embodiment, due to the high output, so even a small number of columns are arranged, for example one, the desired output can be obtained.

另外，作为多模式光纤30，在使用了包层直径＝125μm、芯径＝50μm、NA＝0.2的阶梯折射率型光纤的情况下，激光射出部68处的束径为50μm×125mm。 Further, as a multi-mode optical fiber 30, using the clad diameter = 125μm, core diameter = 50μm, at NA = 0.2 in the case of step-index type optical fiber, the laser beam emitting portion 68 diameter of 50μm × 125mm. 当以沿短轴方向3倍、沿长轴方向1倍的倍率放大束径时，照射区域506的面积为150μm×125mm。 When three times in the short axis direction, along the long axis of a zoom magnification of the beam diameter, the area of ​​the irradiation region 506 is 150μm × 125mm.

一般来说，在激光辅助的漂白处理中，虽然需要2000mJ/cm2～20000mJ/cm2的范围的高光密度，但是本实施方式中，通过适当改变要阵列化的光纤条数、要合波的激光束的条数，就可以容易地实现该范围的光密度。 Generally, in the laser-assisted bleaching treatment, although the scope of the required 2000mJ / cm2 ~ 20000mJ / cm2 of high optical density, but the present embodiment, by appropriately changing the number of optical fibers to be arrayed strip, to a laser beam combiner number of articles, you can easily achieve the optical density range. 当将漂白处理中所需的曝光面上的光密度设为10000mJ/cm2时，在将GaN类半导体激光器LD1～LD7的峰值功率设为3W，将脉冲宽度设为100nsec，将每1秒的脉冲数设为105，效率1％的条件下向布200的表面脉冲照射的情况下，曝光面上的光密度为每1个脉冲10mJ/cm2，可以用1.4cm/s进行高速曝光。 When the bleaching process required optical density of the exposed surface to 10000mJ / cm2 when, in the GaN-based semiconductor lasers LD1 ~ LD7 peak power is set to 3W, the pulse width is set to 100nsec, each one second pulses number is set to 105, the efficiency of 1% under the conditions of pulse irradiation to the case where the surface of the cloth 200, the optical density of the exposed surface per one pulse 10mJ / cm2, can 1.4cm / s high-speed exposure.

另一方面，在不使用GaN类半导体激光器的合波激光光源，而使用准分子激光器的情况下，由于循环频率变低，因此要将相同区域曝光就需要大约10倍以上的速度。 On the other hand, without the use of GaN-based semiconductor laser multiplexed laser light, excimer laser is used, since the cycle frequency becomes low, and therefore requires an exposure to the same area about 10 times the speed.

如上说明所示，本实施方式的漂白处理装置中，使用将高输出并且高亮度的合波激光光源阵列化了的光纤阵列光源，向浸渍了药液的布脉冲照射激光，就可以在布表面获得高能量密度。 As described above, the bleaching treatment apparatus of the present embodiment, using the high output and high brightness multiplexed laser light source of the array of the fiber array light source to the liquid impregnated cloth laser pulse irradiation, it is possible in the cloth surface to obtain a high energy density. 这样，就可以将药液及着色成分的至少一方活化，促进漂白反应，获得较高的漂白效果。 Thus, it can be activated at least one liquid and coloring component to promote bleaching reaction, to obtain a high bleaching effect. 另外，由于激光器脉冲的效率为1％，因此可以抑制发热，防止纤维的损伤。 Further, since the efficiency of the laser pulse is 1%, it is possible to suppress heat generation, to prevent fiber damage.

另外，本实施方式的漂白处理装置中，由于在激光照射部中使用由可以连续驱动并且输出稳定性优良的半导体激光器构成的合波激光光源，因此与使用了准分子激光器的漂白处理装置相比，可以用任意的循环频率、脉冲宽度进行脉冲驱动，通过设定较高的循环频率，就可以用数倍的高速进行漂白处理。 Further, the bleaching treatment apparatus of the present embodiment, since the laser irradiation portion can be continuously driven and to output combiner excellent stability of the laser light source composed of a semiconductor laser, as compared with the use of the excimer laser bleaching treatment apparatus you can use any cyclic frequency, pulse width pulse driving cycle by setting a higher frequency, you can use multiple-speed bleaching process. 另外，与使用了准分子激光器的漂白处理装置相比，能量效率高达10％～20％，维护容易并且成本低。 Further, as compared with the use of the excimer laser bleaching treatment apparatus, the energy efficiency of up to 10% to 20%, and is easy to maintain low cost.

特别是，由于GaN类半导体激光器为共价键性，因此难以产生被称为COD(Catastrophic Optical Damage)的光出射端面的破损，可靠性高，可以实现高峰值功率。 In particular, since the GaN-based semiconductor laser is a covalent bond, and therefore it is difficult to generate is called the COD (Catastrophic Optical Damage) of the light emission facet damage, high reliability, high peak power can be realized. 例如，可以在脉冲宽度100nsec、效率1％的条件下，实现3W的高峰值功率。 For example, in the pulse width 100nsec, the efficiency of 1% of the conditions for the realization of high peak power 3W. 而且，此时的平均输出为30mW。 Moreover, at this time the average output of 30mW.

另外，本实施方式的漂白处理装置中，利用光纤阵列光源的光纤的阵列排列，可以容易地获得线光束。 Further, the bleaching treatment apparatus of the present embodiment, the use of an array of optical fibers arranged in a fiber array light source, the beam line can be easily obtained. 通常，由于纤维产品被制成长方形，因此用被沿短轴方向拉伸，沿与之正交的长轴方向被展开的线光束进行激光照射是合理的。 Typically, the fiber product is made rectangular, and therefore the short axis direction by being stretched along the longitudinal direction perpendicular thereto being expanded line beam laser irradiation is reasonable. 另外，通过增加阵列化的光纤的条数，可以在维持能量强度和其均一性的状态下将线光束长度拉长。 In addition, by increasing the number of arrays of optical fibers, we can maintain the energy intensity and homogeneity of the state stretch the length of the line beam. 另外，由于使用波长350～450nm的激光，因此不需要使用与紫外线对应的特殊的材料的光学系统生成线光束，成本较低。 Further, since the wavelength of 350 ~ 450nm laser, and therefore does not require the use of special materials corresponding to the ultraviolet optical system for generating a beam line, low cost.

[多模式]所述的实施方式中，虽然对设置了具有单一的照射头的激光照射部的例子进行了说明，但是当线光束的长轴方向的长度不够时，也可以将多个照射头沿长轴方向排列。 Embodiment [Multi Mode] described, although an example in which the laser irradiation unit has a single irradiation head has been described, but when the length of the longitudinal direction of the line beam is insufficient, may be more than one radiation head They are arranged along the longitudinal direction.

[半导体激光器]所述中作为半导体激光器，虽然对使用将来可以期待更高输出的激发波长350nm～450nm的GaN类半导体激光器的例子进行了说明，但是，半导体激光器并不限定于GaN类半导体激光器。 [Semiconductor laser] as the semiconductor laser, although the use of the future can be expected higher output excitation wavelength 350nm ~ 450nm examples of GaN-based semiconductor laser has been described, however, the semiconductor laser is not limited to GaN-based semiconductor laser. 例如，可以使用由III族元素(Al、Ga、In)和氮构成的氮化物半导体激光器。 For example, the group III elements (Al, Ga, In) nitride semiconductor laser and nitrogen. 氮化物半导体也可以由以AlxGayIn1-x-yN(x+y≤1)表示的任何组成构成。 The nitride semiconductor may be made of any composition to AlxGayIn1-x-yN (x + y≤1) represented by the composition. 适当改变组成就可以获得激发波长200nm～450nm的半导体激光器。 It can be obtained suitably changing the composition of the excitation wavelength of 200nm ~ 450nm semiconductor laser.

[放大光学系统的其他的例子]可以将所述的照射头500如图45(A)及(B)所示，用如下的部分构成，即，具有将多个(例如1000个)光纤30的出射端(发光点)沿与副扫描方向正交的方向排列成1列的激光射出部的光纤阵列光源506、将从光纤阵列光源506中射出的激光仅向与光纤30的出射端的排列方向正交的方向聚光的第1圆柱透镜512、将向与光纤30的出射端的排列方向正交的方向聚光的激光进行向排列方向聚光而在布200的表面(扫描面)56上成像的第2圆柱透镜514。 [Enlarging optical system of another example] can be said irradiation head 500 in FIG. 45 (A) and (B), with the following parts, i.e., having a plurality (e.g., 1000) of the optical fiber 30 fiber array light source 506 exit end (light emitting point) along the sub-scanning direction are arranged in a direction perpendicular to the laser emitting portion, from the fiber array laser light emitted from the light source 506 only the arrangement direction and the exit end of the fiber 30 is positive post a first direction converging cylindrical lens 512, will be the arrangement direction of the exit end of the optical fiber 30 in the direction orthogonal to the laser converging converging direction are arranged on the surface of the fabric 200 (scanning surface) 56 of the image the second cylindrical lens 514.

第1圆柱透镜512形成沿特定方向具有曲率并且在与特定方向正交的方向上较长的形状，长边方向(与特定方向正交的方向)被按照与光纤30的出射端的排列方向平行的方式配置。 The first cylindrical lens 512 is formed in a specific direction and has a curvature in a direction orthogonal to the specific direction elongated shape, the longitudinal direction (the direction orthogonal to the specific direction) is in accordance with the arrangement direction of the exit end of the optical fiber 30 parallel mode configuration. 另外，第2圆柱透镜514形成沿特定方向具有曲率并且在该特定方向上较长的形状，曲率方向(特定方向)被按照与光纤30的出射端的排列方向平行的方式配置。 Further, the second cylindrical lens 514 is formed in a specific direction and having a curvature on the long shape, a curvature direction (specific direction) in the particular direction in accordance with the optical fiber array direction of the exit end 30 of the parallel configuration.

该照射头中，从光纤阵列光源506中射出的激光被第1圆柱透镜512向与光纤30的出射端的排列方向正交的方向聚光，被第2圆柱透镜514向光纤30的出射端的排列方向聚光，在扫描面56上以线状成像。 The irradiation head, the light emitted from the fiber array light source 506, the laser light is a first cylindrical lens 512 to the arranging direction of the exit end of the optical fiber 30 orthogonal to the direction of the condenser, is arranged in the direction of the second cylindrical lens 514 to the exit end of the fiber 30 is concentrating on the scanning surface 56 linear imaging.

这些圆柱透镜512、514例如作为以沿短轴方向3倍、沿长轴方向10倍的倍率放大束径的放大光学系统发挥作用。 These cylindrical lenses 512, 514, for example, as to three times the short axis direction, along the longitudinal direction 10 times magnification enlarged beam diameter enlargement optical system play a role. 另外，图42中布200被以一定速度传输，被来自照射头500的线光束沿与传输方向相反的方向副扫描。 In addition, the cloth 200 line 500 is at a constant speed transmission, is from the beam irradiation head 42 opposite to the transport direction along the sub-scanning. 像这样，通过利用光学系统将光纤阵列光源的光束放大，就可以将较大的曝光面曝光。 As described above, by using an optical fiber array light beam system enlarged, it can be a larger exposed surface exposure. 另外，通过放大光束，可以获得更深的焦点深度，从而可以将被高速地传输的布均一地照明。 Further, by amplifying the light beam, the deeper the depth of focus can be obtained, which can be transmitted at high speed cloth uniformly illuminated.

这里，算出曝光面上的光密度。 Here, the optical density of the exposed surface is calculated. 在照射头的合波激光光源中使用峰值功率为6W的多模式激光器的情况下，可以利用7个LD获得峰值功率为36W的合波激光束B。 By using peak power laser irradiation head of the combiner source for multi-mode laser 6W case, you can use 7 LD obtain peak power of 36W of co-wave laser beam B. 所以，对于将1000条多模式光纤30排列成1列的光纤阵列光源的情况，激光射出部68的峰值功率约为36kW。 So, for the case of an optical fiber array of light sources over 1000 mode optical fiber 30 are arranged in one of the peak power of the laser emitting section 68 is approximately 36kW.

另外，在作为多模式光纤30，使用包层直径＝125μm，芯径＝50μm，NA＝0.2的阶梯折射率型光纤的情况下，激光射出部68的束径为50μm×125mm。 Further, as in the case of multi-mode optical fiber 30, clad diameter use = 125μm, core diameter = 50μm, NA = 0.2 stepped index type optical fiber, the laser beam emitting portion 68 is 50μm × 125mm. 当以沿短轴方向3倍、沿长轴方向10倍的倍率放大束径时，照射区域506的面积为150μm×1250mm。 When three times in the short axis direction, along the long axis 10-fold magnification zoom beam diameter, an area irradiated region 506 is 150μm × 1250mm. 所以，当在峰值功率6W、脉冲宽度100nsec、效率1％、每1秒的脉冲数105的条件下，向布200的表面脉冲照射时，曝光面上的光密度为每1个脉冲2mJ/cm2。 Therefore, when the peak power 6W, pulse width 100nsec, efficiency of 1%, the lower number of pulses per one second condition 105, when the pulse irradiation to the surface of the cloth 200, the optical density of the exposed surface per one pulse 2mJ / cm2 . 即使估计光学系统的损失约为80％，曝光面上的光密度也达到每1个脉冲1.5mJ/cm2。 Even if the estimated loss of the optical system is about 80%, the optical density of the exposed surface has reached one pulse per 1.5mJ / cm2. 所以，在以10000mJ/cm2的光密度曝光时，可以将宽1.25m的布以0.2cm/s高速曝光。 Therefore, when the optical density 10000mJ / cm2 exposure, can be 1.25m wide cloth to 0.2cm / s high-speed exposure.

[光纤的变形例]所述的实施方式中，虽然对在合波激光光源中使用包层直径为125μm并且均一的光纤的例子进行了说明，但是与实施方式1相同，可以使光纤的出射端的包层直径小于入射端的包层直径。 Embodiment [Modification fiber] said, although the use of cladding diameter of multiplexed laser light is carried out to 125μm and an example of a uniform fiber has been described, but the same as the first embodiment can make the optical fiber exit end cladding diameter smaller than the diameter of the entrance end of the cladding. 通过缩小光纤的出射端的包层直径，发光部直径进一步变小，从而可以实现光纤阵列光源的高亮度化。 By reducing the exit end of the optical fiber cladding diameter, the diameter of the light-emitting portion is further reduced, thereby enabling a high brightness source of an optical fiber array.

[合波激光光源的变形例]图24(A)及(B)所示的多级构造的激光阵列利用的合波激光光源，利用多空腔激光器的多级配置和校准透镜的阵列化尤其可以实现高输出化。 [Modification multiplexed laser light source] FIG. 24 (A) and (B) a multistage laser array structure shown in use multiplexed laser light source, the use of multi-stage multi-cavity laser configuration and calibration of an array of lenses, especially You can achieve a high output. 由于通过使用该合波激光光源，可以构成更高亮度的光纤阵列光源或束光纤光源，因此特别适于作为构成本实施方式的照射头的激光光源的光纤光源。 Since by using this multiplexed laser light source, an optical fiber may be formed higher brightness arrays or bundles of optical fibers light source, it is particularly suitable as a constituent of the present embodiment, a laser light source of the head fiber source.

计算此时的曝光面上的光密度。 The optical density of the exposure time is calculated surface. 通过作为照射头的合波激光光源，使用多横模式的芯片，当将每1个发光点的峰值功率设为6W时，则可以利用20个LD获得峰值功率103W的合波激光束。 By acting as a co-wave laser irradiation head light, using multiple transverse mode of the chip, when the peak power of each one emitting point to the 6W, you can use 20 LD obtain peak power 103W of laser beam combiner. 所以，对于将1750条多模式光纤排列成1列的光纤阵列光源的情况，激光射出部的峰值功率为180kW。 So, for the more than 1750-mode fiber optical fiber array of light sources arranged in one of the cases, the peak power of the laser emitting portion is 180kW.

另外，当作为多模式光纤，使用相同的材料时，则激光射出部的束径为50μm×220mm。 Further, when a multi-mode optical fiber, using the same material, the diameter of the laser beam emitting portion is 50μm × 220mm. 当以沿短轴方向3倍、沿长轴方向10倍的倍率放大束径时，则照射区域的面积为150μm×2200mm。 When three times in the short axis direction, along the longitudinal direction 10 times magnification enlarged beam diameter, the area of ​​the irradiation area of ​​150μm × 2200mm. 所以，当在峰值功率6W、脉冲宽度100nsec、效率1％、每1秒的脉冲数105的条件下，向布的表面脉冲照射时，曝光面上的光密度为每1个脉冲10mJ/cm2。 Therefore, when the peak power 6W, pulse width 100nsec, efficiency of 1%, the lower number of pulses per one second condition 105, the pulse irradiation of the surface of the cloth, the optical density of the exposed surface per one pulse 10mJ / cm2. 即使估计光学系统的损失约为80％，曝光面上的光密度也达到每1个脉冲8mJ/cm2。 Even if the estimated loss of the optical system is about 80%, the optical density of the exposed surface has reached one pulse per 8mJ / cm2. 所以，在以10000mJ/cm2的光密度曝光时，可以将宽2.2m的布以1.2cm/s高速曝光。 Therefore, when the optical density 10000mJ / cm2 exposure, can be 2.2m wide cloth to 1.2cm / s high-speed exposure.