CN204111926U - Polysilicon efficient silicon ingot seeding particle - Google Patents
Polysilicon efficient silicon ingot seeding particle Download PDFInfo
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- CN204111926U CN204111926U CN201420515832.2U CN201420515832U CN204111926U CN 204111926 U CN204111926 U CN 204111926U CN 201420515832 U CN201420515832 U CN 201420515832U CN 204111926 U CN204111926 U CN 204111926U
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Abstract
The utility model discloses a kind of polysilicon efficient silicon ingot seeding particle, solve existing silicon crystal spontaneous nucleation seeding particle and easily cause heterogeneous nucleation and the low problem of nucleus quality.Comprise the seeding particle cores (1) that silicon purity is greater than 99.99999%; the particle diameter of seeding particle cores (1) is 0.15-0.3 millimeter; the outside surface of seeding particle cores (1) is bonded with the bonding coating layer (2) of silicon carbide particle or silicon nitride particle, and the silicon carbide particle in bonding coating layer (2) or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter.The silicon carbide particle chosen is put in agitator together with pure water and tackiness agent and stirs 15-20 minute, make the silicon carbide particle paste suspension body that density is greater than 2.33 grams/cubic centimeter, seeding particle cores (1) is put into suspension liquid carries out coated, then dries and burns cooling.Be specially adapted to produce in crucible in the production process of the efficient silicon ingot of polysilicon.
Description
Technical field
The present invention relates to the seeding particle of the efficient silicon ingot of a kind of polysilicon, particularly the seeding particle and preparation method thereof of the efficient silicon ingot of a kind of polysilicon used in high efficient crucible, is applicable to photovoltaic industry casting ingot process link.
Background technology
Polycrystalline silicon casting ingot process link is in the front end of photovoltaic industry industrial chain, plays conclusive effect to production links such as follow-up silicon chip, cell pieces.Polycrystalline silicon ingot casting is generally the method adopting directional freeze, the silicon material that will be loaded in quartz crucible by electrically heated fusing, recycles certain processing method forming core, long crystalline substance from crucible bottom, finally forms the polycrystal silicon ingot met the demands.At present, the forming core method of efficient silicon ingot mainly contains two kinds, first method utilizes the unfused silicon material being laid on crucible bottom to carry out forming core, namely forming core is carried out with silicon crystal spontaneous nucleation seeding particle, the determination of non-melted silicon material height of laying in crucible bottom depends on manual operation, there is the shortcoming of consistence difference, silicon ingot must expect that rate is low, and cost is high; Second method utilizes the polymorphic structure of crucible bottom to carry out forming core, and crucible bottom polymorphic structure easily causes the sticky crucible in bottom, and there is the problem of returns subsequent disposal difficulty.
Summary of the invention
The invention provides a kind of polysilicon efficient silicon ingot seeding particle, solve existing silicon crystal spontaneous nucleation seeding particle and easily cause heterogeneous nucleation and the low technical problem of nucleus quality.
The present invention solves above technical problem by the following technical programs:
A kind of polysilicon efficient silicon ingot seeding particle; comprise the seeding particle cores that silicon purity is greater than 99.99999%; the particle diameter of seeding particle cores is 0.15-0.3 millimeter; the outside surface of seeding particle cores is bonded with the bonding coating layer of silicon carbide particle or silicon nitride particle, and the silicon carbide particle in bonding coating layer or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter.
The volume of seeding particle cores is 1:2-1:5 with the ratio of the volume of bonding coating layer.
A preparation method for polysilicon efficient silicon ingot seeding particle, comprises the following steps:
The first step, choose the seeding particle cores that particle diameter that silicon purity is greater than 99.99999% is 0.15-0.3 millimeter;
Second step, choose the silicon carbide particle that particle diameter is less than or equal to 0.003 millimeter;
3rd step, choose resistivity and be greater than the pure water of 18M Ω .cm and the metal content tackiness agent lower than 30ppma;
Put in agitator together with the pure water that 4th step, silicon carbide particle and the 3rd step chosen by second step are chosen and tackiness agent and stir 15-20 minute, make the silicon carbide particle paste suspension body that density is greater than 2.33 grams/cubic centimeter;
5th step, the seeding particle cores the first step chosen are put in the silicon carbide particle paste suspension body that the 4th step obtains and are soaked 2-5 minute;
6th step, by soaked for the 5th step and the seeding particle cores being coated with silicon carbide particle paste suspension layer is placed in argon gas atmosphere, dry burning and make its temperature reach 150-200 DEG C, and keep 10-30 minute; Then make it in argon gas atmosphere, naturally cool to room temperature;
7th step, the volume choosing seeding particle cores are the finished product of 1:2-1:5 with the ratio of the volume of bonding coating layer, obtain polysilicon efficient silicon ingot seeding particle.
A preparation method for polysilicon efficient silicon ingot seeding particle, comprises the following steps:
The first step, choose the seeding particle cores that particle diameter that silicon purity is greater than 99.99999% is 0.15-0.3 millimeter;
Second step, choose the silicon nitride particle that particle diameter is less than or equal to 0.003 millimeter;
3rd step, choose resistivity and be greater than the pure water of 18M Ω .cm and the metal content tackiness agent lower than 30ppma;
Put in agitator together with the pure water that 4th step, silicon nitride particle and the 3rd step chosen by second step are chosen and tackiness agent and stir 15-20 minute, make the silicon nitride particle paste suspension body that density is greater than 2.33 grams/cubic centimeter;
5th step, the seeding particle cores the first step chosen are put in the silicon nitride particle paste suspension body that the 4th step obtains and are soaked 2-5 minute;
6th step, by soaked for the 5th step and the seeding particle cores being coated with silicon nitride particle paste suspension layer is placed in argon gas atmosphere, dry burning and make its temperature reach 150-200 DEG C, and keep 10-30 minute; Then make it in argon gas atmosphere, naturally cool to room temperature;
7th step, the volume choosing seeding particle cores are the finished product of 1:2-1:5 with the ratio of the volume of bonding coating layer, obtain polysilicon efficient silicon ingot seeding particle.
Seeding particle of the present invention provides controlled nucleating center for silicon crystal non-spontaneous forming core, and guides the heterogeneous nucleation of silicon crystal, reaches the effect producing good uniformity and the high high-quality nucleus of consistence, for the production of follow-up high-quality cell piece lays the foundation.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail:
A kind of polysilicon efficient silicon ingot seeding particle; comprise the seeding particle cores 1 that silicon purity is greater than 99.99999%; the particle diameter of seeding particle cores 1 is 0.15-0.3 millimeter; the outside surface of seeding particle cores 1 is bonded with the bonding coating layer 2 of silicon carbide particle or silicon nitride particle, and the silicon carbide particle in bonding coating layer 2 or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter.
The volume of seeding particle cores 1 is 1:2-1:5 with the ratio of the volume of bonding coating layer 2.
A preparation method for polysilicon efficient silicon ingot seeding particle, comprises the following steps:
The first step, choose the seeding particle cores 1 that particle diameter that silicon purity is greater than 99.99999% is 0.15-0.3 millimeter;
Second step, choose the silicon carbide particle that particle diameter is less than or equal to 0.003 millimeter;
3rd step, choose resistivity and be greater than the pure water of 18M Ω .cm and the metal content tackiness agent lower than 30ppma;
Put in agitator together with the pure water that 4th step, silicon carbide particle and the 3rd step chosen by second step are chosen and tackiness agent and stir 15-20 minute, make the silicon carbide particle paste suspension body that density is greater than 2.33 grams/cubic centimeter;
5th step, the seeding particle cores 1 the first step chosen are put in the silicon carbide particle paste suspension body that the 4th step obtains and are soaked 2-5 minute;
6th step, by soaked for the 5th step and the seeding particle cores 1 being coated with silicon carbide particle paste suspension layer is placed in argon gas atmosphere, dry burning and make its temperature reach 150-200 DEG C, and keep 10-30 minute; Then make it in argon gas atmosphere, naturally cool to room temperature;
7th step, the volume choosing seeding particle cores 1 are the finished product of 1:2-1:5 with the ratio of the volume of bonding coating layer 2, obtain polysilicon efficient silicon ingot seeding particle.
A preparation method for polysilicon efficient silicon ingot seeding particle, comprises the following steps:
The first step, choose the seeding particle cores 1 that particle diameter that silicon purity is greater than 99.99999% is 0.15-0.3 millimeter;
Second step, choose the silicon nitride particle that particle diameter is less than or equal to 0.003 millimeter;
3rd step, choose resistivity and be greater than the pure water of 18M Ω .cm and the metal content tackiness agent lower than 30ppma;
Put in agitator together with the pure water that 4th step, silicon nitride particle and the 3rd step chosen by second step are chosen and tackiness agent and stir 15-20 minute, make the silicon nitride particle paste suspension body that density is greater than 2.33 grams/cubic centimeter;
5th step, the seeding particle cores 1 the first step chosen are put in the silicon nitride particle paste suspension body that the 4th step obtains and are soaked 2-5 minute;
6th step, by soaked for the 5th step and the seeding particle cores 1 being coated with silicon nitride particle paste suspension layer is placed in argon gas atmosphere, dry burning and make its temperature reach 150-200 DEG C, and keep 10-30 minute; Then make it in argon gas atmosphere, naturally cool to room temperature;
7th step, the volume choosing seeding particle cores 1 are the finished product of 1:2-1:5 with the ratio of the volume of bonding coating layer 2, obtain polysilicon efficient silicon ingot seeding particle.
Silicon carbide particle in bonding coating layer 2 involved in the present invention or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter; also the identical with crystalline silicon lattice parameter or close of other can be selected; and fusing point is higher than 1430 degrees Celsius, the particle that density is greater than 2.33 grams/cc.The most handy tackiness agent identical or close with crystalline silicon lattice parameter of tackiness agent involved in the present invention, the metal content of this tackiness agent will lower than 30ppma.
Seeding particle of the present invention has the physical property close with silicon materials; This seeding particle can effectively reduce the nucleating work needed for forming core, greatly enhances the ability of heterogeneous nucleation; This seeding particle provides controlled nucleating center for silicon crystal non-spontaneous forming core.The invention solves at present, current fine melt efficient silicon ingot early growth period seeding material embeds silicon crystal, causes the later stage to split the problem of ingot; Solve the long brilliant initial stage seed crystal fusing degree of the efficient silicon ingot of current fritting wayward, and the later stage must expect the problem that rate is low; Present invention reduces forming core condition, facilitate the mode of non-spontaneous forming core, solve in nucleation process due to the uncontrollable problem of forming core that the factor such as thermal field, crucible causes.
Claims (2)
1. a polysilicon efficient silicon ingot seeding particle; comprise the seeding particle cores (1) that silicon purity is greater than 99.99999%; it is characterized in that; the particle diameter of seeding particle cores (1) is 0.15-0.3 millimeter; the outside surface of seeding particle cores (1) is bonded with the bonding coating layer (2) of silicon carbide particle or silicon nitride particle, and the silicon carbide particle in bonding coating layer (2) or the particle diameter of silicon nitride particle are less than or equal to 0.003 millimeter.
2. a kind of polysilicon according to claim 1 efficient silicon ingot seeding particle, is characterized in that, the volume of seeding particle cores (1) is 1:2-1:5 with the ratio of the volume of bonding coating layer (2).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420515832.2U CN204111926U (en) | 2014-09-10 | 2014-09-10 | Polysilicon efficient silicon ingot seeding particle |
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| CN201420515832.2U CN204111926U (en) | 2014-09-10 | 2014-09-10 | Polysilicon efficient silicon ingot seeding particle |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152990A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding particle and preparation method thereof |
| CN104831350A (en) * | 2015-05-26 | 2015-08-12 | 江西旭阳雷迪高科技股份有限公司 | Method of distributing seeding material to bottom of quartz ceramic crucible for ingot casting |
| CN105133006A (en) * | 2015-09-11 | 2015-12-09 | 浙江芯能光伏科技股份有限公司 | Polysilicon cast ingot laid bed charge, preparation method of polysilicon cast ingot laid bed charge and application of polysilicon cast ingot laid bed charge |
| CN106801253A (en) * | 2017-02-24 | 2017-06-06 | 常州天合光能有限公司 | A kind of seeding piece and seeding methods for producing efficient polycrystalline silicon |
-
2014
- 2014-09-10 CN CN201420515832.2U patent/CN204111926U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152990A (en) * | 2014-09-10 | 2014-11-19 | 山西中电科新能源技术有限公司 | Polycrystalline-silicon high-efficiency silicon ingot seeding particle and preparation method thereof |
| CN104831350A (en) * | 2015-05-26 | 2015-08-12 | 江西旭阳雷迪高科技股份有限公司 | Method of distributing seeding material to bottom of quartz ceramic crucible for ingot casting |
| CN105133006A (en) * | 2015-09-11 | 2015-12-09 | 浙江芯能光伏科技股份有限公司 | Polysilicon cast ingot laid bed charge, preparation method of polysilicon cast ingot laid bed charge and application of polysilicon cast ingot laid bed charge |
| CN106801253A (en) * | 2017-02-24 | 2017-06-06 | 常州天合光能有限公司 | A kind of seeding piece and seeding methods for producing efficient polycrystalline silicon |
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