Search Results
A 20 dBm Q-Band SiGe Class-E Power Amplifier With 31 ...
ieeexplore.ieee.org/.../0633...Institute of Electrical and Electronics EngineersLoading...by K Datta - 2012 - Cited by 10 - Related articlesA 20 dBm Q-Band SiGe Class-E Power. Amplifier With 31% Peak PAE. Kunal Datta, Jonathan Roderick, and Hossein Hashemi. Electrical ...A 20 dBm Q-band SiGe Class-E power amplifier with 31 ...
www.researchgate.net/.../261276451_A_20_dBm_Q-band_Si...A 20 dBm Q-band SiGe Class-E power amplifier with 31% peak PAE. K. Datta ... H. Hashemi ... ABSTRACT A Q-band two-stage Class-E power amplifier is designed and fabricated in a 0.13 μm SiGe HBT BiCMOS process. A mm-wave Class-E ...ResearchGateLoading...A 22.4 dBm Two-Way Wilkinson Power-Combined Q-Band ...
www.researchgate.net/.../271495250_A_22.4_dBm_Two-Wa...A 22.4 dBm Two-Way Wilkinson Power-Combined Q-Band SiGe Class-E Power Amplifier with 23% Peak PAE. Kunal Datta ... Hossein Hashemi ... A 20 dBm Q-ResearchGateLoading...band SiGe Class-E power amplifier with 31% peak PAE · K. Datta, J. Roderick, ... [PDF]Kunal Datta and Prof. Hossein Hashemi Ming Hsieh ...
https://mhi.usc.edu/files/.../datta-kunal....[1] K.Datta, J.Roderick, H.Hashemi, “A 20 dBm Q-Band SiGe Class-E. Power Amplifier with 31% Peak PAE” in IEEE CICC, Sept. 2012. [2] K.Datta, J.Roderick,University of Southern CaliforniaLoading...... A 20 dBm Q-band SiGe Class-E power amplifier with 31 ...
www.bibsonomy.org/bibtex/.../dblp@inproceedings{conf/cicc/DattaRH12, added-at = {2012-10-23T00:00:00.000+0200}, author = {Datta, Kunal and Roderick, Jonathan and Hashemi, Hossein}, ... dblp: Hossein Hashemi
dblp.uni-trier.de/pers/hd/h/Hashemi:Hossein.htmlFeb 3, 2015 - A 20 dBm Q-band SiGe Class-E power amplifier with 31% peak PAE. CICC 2012: 1-4 ... Harish Krishnaswamy, Hossein Hashemi: A 4-channel ...University of TrierLoading...John Roderick | LinkedIn
https://www.linkedin.com/pub/john-roderick/8/a2b/571Greater Los Angeles Area - High Frequency RF Design EngineerAuthors: John Roderick,; Ta-Shun Chu,; Hossein Hashemi ... A 20 dBm Q-band SiGe Class-E power amplifier with 31% peak PAE(Link). IEEE CICC 2012.[PDF]Monday – Wednesday Technical Sessions Session 1 - CICC
www.ieee-cicc.org/.../Sessions-Co...Sep 10, 2012 - A 20 dBm Q-Band SiGe Class-E Power Amplifier With 25% Peak PAE, K. Datta, J. Roderick, H. Hashemi, University of Southern California.Custom Integrated Circuits ConferenceLoading...[PDF]Micromachines - MDPI.com
www.mdpi.com/.../microma...Multidisciplinary Digital Publishing InstituteLoading...by HC Yeh - Related articlesDec 10, 2014 - properties that the SiGe BiCMOS technology cannot take over nowadays. ..... 60. 70. 80. 90 100 110 120 130 140 150 160. 10. 12. 14. 16. 18. 20 ... In [105], the proposed Q-band high power-added efficiency stack ... In [107], the D-band amplifier has a measured saturation output power of 8 dBm at 155 GHz ...Hossein Hashemi - FreeSearch
dblp.kbs.uni-hannover.de/.../Search.action;...Hashemi...q...... and Stacked Class-E Power Amplifiers. A mm-wave class-E 1-bit power modulator. A 20 dBm Q-band SiGe Class-E power amplifier with 31% peak PAE.